Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Thai-Truong D. Tran"'
Autor:
Connie J. Chang-Hasnain, Fanglu Lu, Thai-Truong D. Tran, Hao Sun, Indrasen Bhattacharya, Gilliard N. Malheiros-Silveira
Publikováno v:
ACS Photonics. 4:1021-1025
We propose a platform based on III−V compound semiconductor nanopillars monolithically integrated with silicon photonics. Nanopillars were grown in a process free of metal catalysts onto silicon at low temperature, and a bottom-up process was appli
Publikováno v:
Nano Letters. 15:7189-7198
The direct growth of III-V nanostructures on silicon has shown great promise in the integration of optoelectronics with silicon-based technologies. Our previous work showed that scaling up nanostructures to microsize while maintaining high quality he
Publikováno v:
Nano Letters. 13:5931-5937
Monolithic integration of III-V optoelectronic devices with materials for various functionalities inexpensively is always desirable. Polysilicon (poly-Si) is an ideal platform because it is dopable and semiconducting, and can be deposited and pattern
Autor:
Wai Son Ko, Stephen Adair Gerke, Indrasen Bhattacharya, Connie J. Chang-Hasnain, Kar Wei Ng, Thai-Truong D. Tran
Publikováno v:
Scientific Reports
Highly sensitive and fast photodetectors can enable low power, high bandwidth on-chip optical interconnects for silicon integrated electronics. III-V compound semiconductor direct-bandgap materials with high absorption coefficients are particularly p
Autor:
Thai-Truong D. Tran, Roger Chen, L.C. Chuang, Kar Wei Ng, M. Moewe, Connie J. Chang-Hasnain, Forrest G. Sedgwick, Wai Son Ko
Publikováno v:
Nano Letters. 11:385-390
Monolithic integration of III-V compound semiconductor devices with silicon CMOS integrated circuits has been hindered by large lattice mismatches and incompatible processing due to high III-V epitaxy temperatures. We report the first GaAs-based aval
Autor:
L.C. Chuang, Forrest G. Sedgwick, Kar Wei Ng, Connie J. Chang-Hasnain, Thai-Truong D. Tran, Roger Chen, Wai Son Ko
Publikováno v:
Nature Photonics. 5:170-175
Integration of optical interconnects with silicon-based electronics can address the growing limitations facing chip-scale data transport as microprocessors become progressively faster. However, material lattice mismatch and incompatible growth temper
Autor:
Hao Sun, Connie J. Chang-Hasnain, Thai-Truong D. Tran, Kar Wei Ng, Wai Son Ko, Indrasen Bhattacharya
Publikováno v:
Nano letters. 15(8)
Low cost, high efficiency photovoltaic can help accelerate the adoption of solar energy. Using tapered indium phosphide nanopillars grown on a silicon substrate, we demonstrate a single nanopillar photovoltaic exhibiting illumination angle insensitiv
Autor:
Indrasen Bhattacharya, Connie J. Chang-Hasnain, Thai-Truong D. Tran, Kar Wei Ng, Hao Sun, Gilliard N. Malheiros-Silveira, Fanglu Lu
Publikováno v:
Optica. 4:717
Future expansion of computing capabilities relies on a reduction of energy consumption in silicon-based integrated circuits. A promising solution is to replace electrical wires with optical connections, for which a key component is a nanolaser that c
Autor:
Thai-Truong D. Tran, Kar Wei Ng, Connie J. Chang-Hasnain, Fanglu Lu, Roger Chen, Kun Li, Wai Son Ko
Publikováno v:
ACS applied materialsinterfaces. 6(19)
Alloy composition homogeneity plays an important role in the device performance of III-V heterostructures. In this work, we study the spatial composition uniformity of n-In0.12Ga0.88As/i-In0.2Ga0.8As/p-GaAs core-shell nanopillars monolithically grown
Autor:
Fanglu Lu, Wai Son Ko, Thai-Truong D. Tran, Connie J. Chang-Hasnain, Kar Wei Ng, Devang Parekh, Roger Chen, Kun Li
Publikováno v:
Nature Communications. 5
Harnessing light with photonic circuits promises to catalyse powerful new technologies much like electronic circuits have in the past. Analogous to Moore's law, complexity and functionality of photonic integrated circuits depend on device size and pe