Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Th.W. Matthes"'
Autor:
Ch. Sommerhalter, Arnulf Jäger-Waldau, Th.W. Matthes, Th. Glatzel, M.Ch. Lux-Steiner, Sascha Sadewasser
Publikováno v:
Scopus-Elsevier
Kelvin probe force microscopy in ultrahigh vacuum is a powerful technique for the quantitative characterization of structural and electronic properties of semiconductor surfaces and interfaces on a nanometer scale. In chalcopyrite heterojunction sola
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::511791aa675a00ccb07c935794b4dbdd
https://doi.org/10.1016/s0039-6028(01)00878-0
https://doi.org/10.1016/s0039-6028(01)00878-0
Autor:
Th.W. Matthes, Alejandro Pérez-Rodríguez, I. Hengel, R. Klenk, M.Ch. Lux-Steiner, J. Álvarez-García, A. Neisser, Albert Romano-Rodriguez
Publikováno v:
Solar Energy Materials and Solar Cells. 67:97-104
Thin film CuInS 2 :Ga solar cell absorber films were prepared by sequential evaporation of Cu–In–Ga precursors and sulfurization in sulfur vapor. The depth distribution of Ga was found to be highly inhomogeneous caused by CuGaS 2 phase segregatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f38f7e20419e739ecd668e18631bbf7d
https://doi.org/10.1016/s0927-0248(00)00268-3
https://doi.org/10.1016/s0927-0248(00)00268-3
Publikováno v:
Applied Surface Science. 157:263-268
We present a detailed study of contact potential difference measurements in ultra high vacuum using Kelvin probe force microscopy. A dependence of the contact potential difference on the tip-sample distance was measured and is explained by an inhomog
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9d6ade03ca011b8bbcaa5f7fc8785f62
https://doi.org/10.1016/s0169-4332(99)00537-1
https://doi.org/10.1016/s0169-4332(99)00537-1
Autor:
S. Siebentritt, Rolf Könenkamp, R. Klenk, Ch.-H. Fischer, Arnulf Jäger-Waldau, Th.W. Matthes, Ahmed Ennaoui, Roland Scheer, Alois Weidinger, M.Ch. Lux-Steiner, Joachim Klaer
Publikováno v:
Thin Solid Films. :533-539
This contribution deals with the investigations of chalcopyrite solar cells. Main attention is paid to absorber materials with band gaps larger than 1.5 eV. Besides the different efforts to modify and optimise stoichiometric CuInS 2 films, novel depo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b9ba33f2763b8cb519b16ab0737405c
https://doi.org/10.1016/s0040-6090(99)00826-3
https://doi.org/10.1016/s0040-6090(99)00826-3
Publikováno v:
Applied Physics Letters. 75:286-288
We present quantitative measurements of the work function of semiconductor and metal surfaces prepared in ultrahigh vacuum (UHV) using a combination of UHV noncontact atomic force microscopy and Kelvin probe force microscopy. High energetic and later
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06e481c15654a2aa7bc1eca222c1c0a9
https://doi.org/10.1063/1.124357
https://doi.org/10.1063/1.124357
Current imaging tunneling spectroscopy (CITS) and photo-assisted scanning tunneling spectroscopy (STS) is used to characterize dopants in p-type WS 2 single crystals. While the local charge distribution at ionized acceptor sites give rise to topograp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cdf5378714372586c735b65a6af38d5a
Autor:
Mathias Böhmisch, Ch. Sommerhalter, Th.W. Matthes, M.Ch. Lux-Steiner, Armin Rettenberger, Paul Leiderer, Johannes Boneberg
Photoassisted scanning tunneling microscopy was used to simultaneously image topoyraphy, photoinduced mnneling current and local surface photovoltage on an nm-scale. A novel interrupted z-feedback technique is presented which overcomes the limitation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::af754b48edcb570dc3b1875bf92baea6
A detailed study of tunneling spectroscopy concerning semiconductors with a low surface state density is presented. For this purpose, I V curves under dark conditions and under illumination were measured on the (0001) van der Waals surface of a p-typ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4453527aa776403b1649c5d684192f79
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