Zobrazeno 1 - 10
of 107
pro vyhledávání: '"Th. Seyller"'
Publikováno v:
New Journal of Physics, Vol 15, Iss 11, p 113006 (2013)
Raman spectroscopy is frequently used to study the properties of epitaxial graphene grown on silicon carbide (SiC). In this work, we present a confocal micro-Raman study of epitaxial graphene on SiC(0001) in top-down geometry, i.e. in a geometry wher
Externí odkaz:
https://doaj.org/article/aa799955b4074c3ba131d9a268c4c2e8
Autor:
M Orlita, I Crassee, C Faugeras, A B Kuzmenko, F Fromm, M Ostler, Th Seyller, G Martinez, M Polini, M Potemski
Publikováno v:
New Journal of Physics, Vol 14, Iss 9, p 095008 (2012)
We report on absolute magneto-transmission experiments on highly doped quasi-free-standing epitaxial graphene targeting the classical-to-quantum crossover of the cyclotron resonance. This study allows us to directly extract the carrier density and al
Externí odkaz:
https://doaj.org/article/b75382d3ab564780abe643af6f62d97d
Autor:
Florian Speck, Juergen A. Schaefer, S. Fryska, Markus Ostler, Roland J. Koch, M. Endlich, Th. Seyller, T. Hänsel
Publikováno v:
Physical Review Letters. 116
Using inelastic electron scattering in combination with dielectric theory simulations on differently prepared graphene layers on silicon carbide, we demonstrate that the coupling between the 2D plasmon of graphene and the surface optical phonon of th
Autor:
Th. Seyller, Markus Ostler, Andrew L. Walter, Iaroslav Gaponenko, Milan Orlita, I. Crassee, Alexey B. Kuzmenko, Jianing Chen, Marek Potemski
Publikováno v:
NANO LETTERS
Digital.CSIC. Repositorio Institucional del CSIC
instname
Nano Letters, Vol. 12, No 5 (2012) pp. 2470-2474
Digital.CSIC. Repositorio Institucional del CSIC
instname
Nano Letters, Vol. 12, No 5 (2012) pp. 2470-2474
arXiv:1204.4372.-- et al.
We show that in graphene epitaxially grown on SiC the Drude absorption is transformed into a strong terahertz plasmonic peak due to natural nanoscale inhomogeneities, such as substrate terraces and wrinkles. The excitat
We show that in graphene epitaxially grown on SiC the Drude absorption is transformed into a strong terahertz plasmonic peak due to natural nanoscale inhomogeneities, such as substrate terraces and wrinkles. The excitat
Autor:
Roland J. Koch, Th. Seyller, Tevye Kuykendall, Christopher T. Chen, Bruno Schuler, Alexander Weber-Bargioni, Christoph Kastl, Adam M. Schwartzberg, Shaul Aloni, Aaron Bostwick, E. Rotenberg, Chris Jozwiak
Publikováno v:
2D Materials. 5:045010
Author(s): Kastl, C; Chen, CT; Koch, RJ; Schuler, B; Kuykendall, TR; Bostwick, A; Jozwiak, C; Seyller, T; Rotenberg, E; Weber-Bargioni, A; Aloni, S; Schwartzberg, AM | Abstract: Van der Waals epitaxy enables the integration of 2D transition metal dic
Publikováno v:
physica status solidi c. 7:394-397
Using high resolution electron energy loss spectroscopy (HREELS) in conjunction with low energy electron diffraction (LEED) and X-ray induced photoelectron spectroscopy (XPS), we have studied surface reconstructions from Si-rich to C-rich surfaces up
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 42:687-690
In this work we report on temperature-dependent magnetotransport measurements on epitaxial graphene grown on SiC ( 0 0 0 1 ) under different preparation conditions. We demonstrate that the temperature dependence of the charge carrier density and mobi
Autor:
Konstantin V. Emtsev, C. T. Foxon, Sergio Valencia, K. W. Edmonds, R. P. Campion, W. Gudat, B. L. Gallagher, Oliver Rader, Th. Seyller
Publikováno v:
physica status solidi (b). 246:1435-1439
Epitaxial films of Ga1–xMnx As, x = 0.08, with a high ferromagnetic ordering temperature (TC = 160 K) grown and post-growth annealed at low temperature (LT) have been studied in a photoemission experiment. The (100) surfaces were prepared by wet et
Autor:
R.C.G. Leckey, Florian Speck, Anton Tadich, J.D. Riley, Konstantin V. Emtsev, L. Broekman, Andrei Varykhalov, Alexander M. Shikin, Th. Seyller, Lothar Ley, Kun Yuan Gao, Oliver Rader
Publikováno v:
Surface Science. 600:3906-3911
Photoelectron spectroscopy, low-energy electron diffraction, and scanning probe microscopy were used to investigate the electronic and structural properties of graphite layers grown by solid state graphitization of SiC(0 0 0 1) surfaces. The process
Autor:
R.C.G. Leckey, Konstantin V. Emtsev, Anton Tadich, Th. Seyller, M. Preuss, L. Broekman, J.D. Riley, Lothar Ley
Publikováno v:
Surface Science. 600:3845-3850
The properties of the clean and unreconstructed 6H–SiC(0 0 0 1) and 6H–SiC ( 0 0 0 1 ¯ ) surfaces were investigated by means of angle-resolved photoelectron spectroscopy (ARPES). These highly metastable surfaces were prepared by exposing hydroge