Zobrazeno 1 - 10
of 73
pro vyhledávání: '"Th. Litz"'
Autor:
Andreas Waag, G. Landwehr, F. Fischer, H. Dröge, Th. Litz, Hans-Peter Steinrück, M. Nagelstrasser
Publikováno v:
Journal of Applied Physics. 83:4253-4257
Using photoelectron spectroscopy, we have investigated the band alignment at the interface of pseudomorphic BeTe/ZnSe(100) heterojunctions for different interface terminations. The heterostructures of high structural quality have been produced by mol
Autor:
F. Fischer, T. Gerhard, M. Keim, Th. Litz, U. Lunz, G. Landwehr, U. Zehnder, H.-J. Lugauer, Andreas Waag, G. Reuscher, K. Schüll, Thierry Baron
Publikováno v:
Journal of Crystal Growth. :1-10
An additional, yet untried approach to further improve the reliability of ZnSe-based devices is to use beryllium containing II–VI compounds. BeS, BeSe and BeTe are characterized by a considerable amount of covalent bonding and a high bond energy. T
Autor:
Th. Litz, Dmitri R. Yakovlev, F. Fischer, V. P. Kochereshko, U. Zehnder, Alexey V. Platonov, W. Ossau, G. Landwehr, Andreas Waag
Publikováno v:
Journal of Crystal Growth. :801-805
We present an optical study of novel ZnSe/BeTe heterostructures with a type-II band alignment based on beryllium chalcogenides. A strong exciton transition involving a confined electron and a quasibound hole state (both in the ZnSe layer) is observed
Autor:
Andreas Waag, G. Landwehr, H. Dröge, F. Fischer, Th. Litz, Hans-Peter Steinrück, M. Nagelstraßer
Publikováno v:
Journal of Crystal Growth. :173-177
BeTe is a new material within the class of II–VI semiconductors with novel and interesting properties. It is well lattice matched to GaAs as well as ZnSe and therefore can be combined in superlattices with these materials. Using photoelectron spect
Autor:
Veit Wagner, T. Gerhard, G. Landwehr, Th. Litz, U. Küster, Jean Geurts, F. Fischer, H.-J. Lugauer, R. Kruse, Ch. Becker, S. Gundel, Andreas Waag
Publikováno v:
Scopus-Elsevier
We present an investigation of the vibrational properties, the elastic constant c11 and the infrared dielectric constant e∞ of BeTe. For this purpose we applied far-infrared reflectance and Raman spectroscopy to single BeTe layers and BeTe/ZnSe sup
Autor:
R. Gall, H.-J. Lugauer, M. Nagelstraßer, T. Gerhard, F. Fischer, M. Th. Litz, G. Landwehr, Hans-Peter Steinrück, Dagmar Gerthsen, W. Ossau, M. Keim, U. Zehnder, Andreas Waag, Th. Walter
Publikováno v:
Applied Surface Science. :429-434
We report on the molecular beam epitaxy and the properties of Be-chalcogenides. Especially the interface between ZnSe and BeTe and BeTe/ZnSe superlattices have been studied by means of HRXRD (high resolution X-ray diffraction), HRTEM (high resolution
Autor:
Dmitri R. Yakovlev, Andreas Waag, V. P. Kochereshko, F. Fischer, Th. Litz, W. Ossau, U. Zehnder, G. Landwehr, Alexey V. Platonov
Publikováno v:
Acta Physica Polonica A. 92:953-957
Autor:
Dmitri R. Yakovlev, W. Ossau, S. V. Zaitsev, Andreas Waag, D. A. Pronin, V. D. Kulakovskii, G. Landwehr, A. A. Maksimov, Nikolay A. Gippius, M. Th. Litz, F. Fisher, I. I. Tartakovskii
Publikováno v:
Journal of Experimental and Theoretical Physics Letters. 66:376-381
A giant blue shift (≈0.5 eV) and a large decrease in the emission time of a spectral band corresponding to radiative recombination of spatially separated electrons and holes are observed in ZnSe/BeTe superlattices at high laser excitation levels. O
Autor:
Th. Litz, W. Ossau, H.-J. Lugauer, F. Fischer, T. Gerhard, U. Zehnder, Andreas Waag, G. Landwehr
Publikováno v:
Journal of Crystal Growth. :619-623
We have grown Be-chalcogenides for the first time by molecular beam epitaxy (MBE) on GaAs substrates. The lattice constants of both BeTe and BeSe are smaller than that of GaAs, therefore Be containing compounds such as (BeMg)Te or (BeZn)Se and (BeMgZ
Autor:
H.-J. Lugauer, W. Ossau, Th. Litz, G. Landwehr, T. Gerhard, U. Zehnder, F. Fischer, Andreas Waag
Publikováno v:
Journal of Crystal Growth. :532-540
Beryllium chalcogenides are semiconductors with a large band gap. They have a higher-degree of covalent bonding than all of the other II–VI compounds. The bond energies of BeTe, BeSe and BeS are comparable to those of GaN. Due to their band gaps an