Zobrazeno 1 - 10
of 42
pro vyhledávání: '"Th. Kups"'
Publikováno v:
AIP Advances, Vol 6, Iss 3, Pp 035109-035109-10 (2016)
Self-assembly of ultrathin Au, W, and Au-W bilayer thin films is investigated using a rapid thermal annealing technique in an inert ambient. The solid-state dewetting of Au films is briefly revisited in order to emphasize the role of initial film thi
Externí odkaz:
https://doaj.org/article/211e3fd9a04d40d3bd6bed78467cce12
Publikováno v:
Materials Science and Engineering: A. 644:275-283
Al/Si 3 N 4 multilayers with different individual layer thicknesses (10 nm–500 nm) fabricated by magnetron sputtering on Si substrate were tested by using nanoindentation. The mechanical properties and deformation behavior change clearly with the i
Autor:
Vladimir Smirnov, E. Marins, Jürgen Hüpkes, Lothar Spiess, Ivan Hotovy, W. Böttler, Th. Kups, Jaroslav Kováč, J. Hotovy
Publikováno v:
Applied Surface Science. 269:81-87
Indium tin oxide (ITO) thin films for application in thin-film silicon solar cells with superior electrical and optical properties (resistivity ranging from 1.4 to 8.4 × 10 −4 Ω cm; transparency of >80%) have been investigated. ITO layers were de
Publikováno v:
Electrochimica Acta. 63:192-196
Novel pyrolyzed photoresist film (PPF) electrodes for application in electroanalysis have been prepared by pyrolysis of various photoresists on alumina substrates and characterized for their electrical, microstructural and electrochemical properties.
Autor:
Marcus Wilke, Th. Kups, C. Lange, Peter Schaaf, J. Schawohl, Marcus Hopfeld, Michel W. Barsoum
Publikováno v:
physica status solidi (a). 209:545-552
Pulsed laser deposition (PLD) employing a pulsed Nd:YAG laser was used to grow thin films from a pre-synthesized Cr2AlC MAX phase ablation target onto MgO(100), amorphous SiO2 and stainless steel substrates. The depositions were carried out for subst
Autor:
Th. Kups, Juraj Breza, Rüdiger Goldhahn, Vlastimil Rehacek, Magdaléna Kadlečíková, E. Sakalauskas, Ivan Hotovy, Jörg Pezoldt, Lothar Spiess
Publikováno v:
Thin Solid Films. 518:4508-4511
Structural evolution of indium oxide thin films deposited at room temperature by reactive magnetron sputtering and annealing in a reducing atmosphere were investigated. The as deposited indium oxide (In 2 O 3 ) films showed a dominating randomly orie
Publikováno v:
Sensors and Actuators B: Chemical. 130:589-593
In 2 O 3 nanoparticles were deposited by low-temperature metal organic chemical vapor deposition. The response of 10-nm thick In 2 O 3 particle containing layers to NO x and O 2 gases is investigated. The lowest detectable NO x concentration is ∼20
Autor:
Vadim Lebedev, Th. Kups, David González, V. Cimalla, Vladimir Polyakov, Stefan Krischok, Francisco M. Morales, J. A. Schaefer, Ch. Y. Wang, Juan G. Lozano, S. Hauguth, Frank Schwierz, Marcel Himmerlich, Oliver Ambacher
Publikováno v:
physica status solidi c. 5:495-498
The structural, chemical and electron transport properties of In2O3/InN heterostructures and oxidized InN epilayers are reported. It is shown that the accumulation of electrons at the InN surface can be manipulated by the formation of a thin surface
Publikováno v:
Thin Solid Films. 515:6611-6614
Tuning of structural and electrical properties of indium oxide (In 2 O 3 ) films by means of metal organic chemical vapor deposition is demonstrated. Phase selective growth of rhombohedral In 2 O 3 (0001) and body-centered cubic In 2 O 3 (001) polyty
Publikováno v:
physica status solidi (a). 204:998-1001
4H silicon carbide (Si 1-x C 1-y )Ge x+y solid solutions with an average Ge incorporation on lattice sites ranging from 0.7 to 2.5 percent were formed by ion beam synthesis. RBS and RBS/C investigations revealed a decreasing Ge lattice incorporation