Diffusion of phosphorus implanted in germanium

Autor: S. Roques, J.P. Ponpon, Ch. Dubois, Th. Canneaux, Daniel Mathiot, S. Schmitt

Publikováno v: Mater. Sci. Eng. B
Mater. Sci. Eng. B, 2008, 154-155, pp. 68-71
Diffusion of phosphorus implanted in germanium
European Material Research Society (E-MRS) Spring Conference, Symposium on Front-end Junction and Contact Formation in Future Silicon/Germanium Based Devices
European Material Research Society (E-MRS) Spring Conference, Symposium on Front-end Junction and Contact Formation in Future Silicon/Germanium Based Devices, May 2008, Strasbourg, France. pp. 68-71

Diffusion experiments of phosphorus introduced by ion implantation in high purity germanium, bare or covered by silicon nitride have been performed at temperatures between 500 °C and 720 °C for times up to 4 h. The distribution profiles of phosphor

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https://hal.archives-ouvertes.fr/hal-00301345