Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Th K Voilas"'
Publikováno v:
Journal of Physics: Conference Series. 10:365-368
The design of an embedded DRAM based on MOSFETs with alternative gate dielectrics is presented and analysed. Design and evaluation of NMOS devices with high-k dielectric gate insulators and DRAM circuits took place. Reliability parameters of the NMOS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cea0d53d46e1d609e3a66fa82fb29c85
https://doi.org/10.1088/1742-6596/10/1/089
https://doi.org/10.1088/1742-6596/10/1/089
Autor:
Th K Voilas, M N Pisanias, J. Sotiropoulos, Christoforos A. Krontiras, Nikos Konofaos, Evangelos Evangelou, Zhongchun Wang, Stavroula N. Georga
Publikováno v:
Journal of Physics: Conference Series. 10:49-52
The electrical properties of MOS devices with high-k insulating BaTiO3 sol gel films fabricated onto p-Si substrates, were investigated by a variety of electrical techniques. The aim was to identify the temperature dependence of the electrical proper
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ac06a41dab889bcf2d747cc8c9dcbb6
https://doi.org/10.1088/1742-6596/10/1/013
https://doi.org/10.1088/1742-6596/10/1/013
Publikováno v:
SPIE Proceedings.
Design and construction of new sub-micron MOSFETs with alternative gate dielectrics has emerged as a new technology for use in high-performance logic or low power memory circuits. The modelling of the new devices needs to take into account the effect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13938c5e3d82c466a6d9386f04005180
https://doi.org/10.1117/12.607757
https://doi.org/10.1117/12.607757
Publikováno v:
Journal of Physics: Conference Series; 2005, Vol. 10 Issue 1, p1-1, 1p