Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Tewook Bang"'
Publikováno v:
IEEE Electron Device Letters. 42:1731-1734
Stress-induced damage in a MOSFET can be cured by Joule heating, which can be produced by an intentional forward junction current ( ${I}_{\textbf {FWD}}$ ). This curing effect can be further enhanced by the simultaneous application of gate biasing, w
Autor:
Seong-Wan Ryu, Hagyoul Bae, Choong-Ki Kim, Yang-Kyu Choi, Gun-Hee Kim, Yoon-Ik Son, Geon-Beom Lee, Jae Hur, Tewook Bang
Publikováno v:
IEEE Transactions on Electron Devices. 65:419-423
A highly biased linear current method (HBLCM) for separately extracting source and drain resistance ( ${R}_{S}$ and ${R}_{D}$ ) in MOSFETs is proposed. The technique can be applied to a single device by using simple modeling. Compared to other method
Autor:
Yang-Kyu Choi, Dong-Il Moon, Byung Chul Jang, Seung-Wook Lee, Sung-Yool Choi, Seong-Yeon Kim, Do Hyun Kim, Kyu-Man Hwang, Tewook Bang, Choong-Ki Kim, Myungsoo Seo, Hagyoul Bae
Publikováno v:
IEEE Electron Device Letters. 38:1008-1011
The low-frequency noise (LFN) characteristics of a vertical pillar-type FET were investigated in order to observe the different influences of the source resistance ( $R_{S})$ and the drain resistance ( $R_{D})$ . Because of its inherent vertical chan
Autor:
Jun-Young Park, Jae Hur, Yang-Kyu Choi, Choong-Ki Kim, Chang-Hoon Jeon, Tewook Bang, Seong-Wan Ryu, Seyeob Kim, Yun-Ik Son, Dae-Chul Ahn, Yong-Taik Kim, Gun-Hee Kim, Hagyoul Bae, Jae-Hoon Lee
Publikováno v:
Journal of Nanoscience and Nanotechnology. 17:3247-3250
Autor:
Seung-Bae Jeon, Choong-Ki Kim, Byung-Hyun Lee, Jae-Sub Oh, Dae-Chul Ahn, Minho Kang, Yang-Kyu Choi, Tewook Bang
Publikováno v:
IEEE Electron Device Letters. 38:40-43
Low-frequency (LF) noise in a vertically stacked nanowire (VS-NW) memory device, which is based on the silicon–oxide–nitride–oxide–silicon (SONOS) configuration is characterized in two different operational modes, an inversion-mode and a junc
Publikováno v:
IEEE Transactions on Electron Devices. 65:4022-4024
In this response, we show that the paper by Kim et al. by our group has a different research purpose and uses different modeling processes, which was not described in the previous work by Ortiz-Conde et al. The comments issued by Ortiz-Conde et al.,
Autor:
Choong-Ki Kim, Sungwoo Jun, Jun-Young Park, Tewook Bang, Myung Keun Lee, Yang-Kyu Choi, Hagyoul Bae, Kyung Cheol Choi, Sang-Hee Ko Park, Eungtaek Kim, Myeong-Lok Seol, Seung-Bae Jeon
Publikováno v:
ACS Applied Materials & Interfaces. 8:23820-23826
An electro-thermal annealing (ETA) method, which uses an electrical pulse of less than 100 ns, was developed to improve the electrical performance of array-level amorphous-oxide-semiconductor (AOS) thin-film transistors (TFTs). The practicality of th
Autor:
Byung-Hyun Lee, Yang-Kyu Choi, Jae Hur, Tewook Bang, Dae-Chul Ahn, Seung-Bae Jeon, Minho Kang
Publikováno v:
IEEE Electron Device Letters. 37:541-544
A comprehensive analysis of the gate-induced drain leakage (GIDL) current of vertically stacked nanowire (VS-NW) FETs was carried out. In particular, two different operational modes of the VS-NW, an inversion mode (IM) and a junctionless mode (JM), w
Autor:
Jae Hur, Yang-Kyu Choi, Ji-Min Choi, Tewook Bang, Dong-Il Moon, Hagyoul Bae, Ui-Sik Jeong, Choong-Ki Kim
Publikováno v:
IEEE Transactions on Electron Devices. 63:2210-2213
Low-frequency noise (LFN) behaviors, characterized with an SONOS-based gate-all-around junctionless nanowire (JLNW), are investigated to determine the suitability of this type of NW as a memory cell structure. LFN exhibits a 1/ $f$ -shape and is desc
Autor:
Choong-Ki Kim, Hagyoul Bae, Dong-Il Moon, Chang-Hoon Jeon, Yang-Kyu Choi, Myeong-Lok Seol, Tewook Bang, Jun-Young Park
Publikováno v:
IEEE Transactions on Electron Devices. 63:910-915
Device degradation induced by hot-carrier injection was repaired by electrical annealing using Joule heat through a built-in heater in a gate. The concentrated high temperature anneals the gate oxide locally and the degraded device parameters are rec