Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Teuku Muhammad Roffi"'
Autor:
Noriko Kurose, Kota Matsumoto, Fumihiko Yamada, Teuku Muhammad Roffi, Itaru Kamiya, Naotaka Iwata, Yoshinobu Aoyagi
Publikováno v:
AIP Advances, Vol 8, Iss 1, Pp 015329-015329-5 (2018)
A method for laser-induced local p-type activation of an as-grown Mg-doped GaN sample with a high lateral resolution is developed for realizing high power vertical devices for the first time. As-grown Mg-doped GaN is converted to p-type GaN in a conf
Externí odkaz:
https://doaj.org/article/4670fe47cd3a479e8863f4a3d4f5616a
Publikováno v:
2020 Third International Conference on Vocational Education and Electrical Engineering (ICVEE).
Urban farming lifestyle has gained traction in recent years as society started to pay more attention to the quality of the product being consumed. Aeroponic is one of the urban farming techniques which employs air as the growing medium. Aeroponic all
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad73c495e9627a1e918789450b0c6c4d
https://doi.org/10.1109/icvee50212.2020.9243213
https://doi.org/10.1109/icvee50212.2020.9243213
Autor:
Fathur Rozi Yansyah, Romi Naufal Karim, Teuku Muhammad Roffi, Arya Widya Ramadhan, Nita Indriani Pertiwi
Publikováno v:
2020 Third International Conference on Vocational Education and Electrical Engineering (ICVEE).
Oxide semiconductors are promising materials for various electronic devices ranging from the gas sensor to photodetector. Nickel oxide (NiO) is particularly interesting to be one of the few p-type oxide semiconductors. In NiO, p-type semiconductivity
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f4a4c353f91f64c1ef907bf15730035
https://doi.org/10.1109/icvee50212.2020.9243170
https://doi.org/10.1109/icvee50212.2020.9243170
Autor:
Kamelia Agustina, Antonius Daud Bastian Wibowo, Zayyan Rafi Kesuma, Teuku Muhammad Roffi, Teguh Aryo Nugroho
Publikováno v:
2020 Third International Conference on Vocational Education and Electrical Engineering (ICVEE).
The electronic gas sensor is an essential aspect of operational safety in the industry as well as in personal settings. Efforts in developing electronic gas sensors have been focused on improving the device’s sensitivity and selectivity. Nanostruct
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7044d0b68e8866f58a687143ddd37ae
https://doi.org/10.1109/icvee50212.2020.9243249
https://doi.org/10.1109/icvee50212.2020.9243249
Autor:
Sundarajoo Thulasiraman, Noor Mona Md Yunus, Pradeep Kumar, Zayyan Rafi Kesuma, Nadia Norhakim, Cecilia Devi Wilfred, Teuku Muhammad Roffi, Mohamad Faizal Hamdan, Zainal Arif Burhanudin
Publikováno v:
Materials; Volume 15; Issue 8; Pages: 2818
Asphaltene is a component of crude oil that has remained relatively unexplored for organic electronic applications. In this study, we report on its extraction technique from crude oil tank bottom sludge (COTBS) and its thin-film characteristics when
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9fe6a4f0943943e6bb14ad88646a013a
https://doi.org/10.3390/ma15082818
https://doi.org/10.3390/ma15082818
Publikováno v:
Journal of Crystal Growth. 451:57-64
Nickel oxide (NiO) thin films were grown by atmospheric-pressure metal organic chemical vapor deposition (APMOCVD). Growth was carried out using various growth parameters, including the growth temperature, the input precursor (O2/Ni) ratio, and the t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5400d23fd36a38e04b385f12cd529add
https://doi.org/10.1016/j.jcrysgro.2016.06.047
https://doi.org/10.1016/j.jcrysgro.2016.06.047
Publikováno v:
Journal of Crystal Growth. 414:123-129
Thin films of cobalt-nickel oxide (Co x Ni 1-x O, x=0.01, 0.02, 0.08, 0.17, 0.22, 0.35, 0.56, 0.72) were grown on Al 2 O 3 substrate by atmospheric pressure metalorganic chemical vapor deposition (APMOCVD). The effect of the cobalt composition on the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::797b2d5bce5dee27b8156cb66bdfc859
https://doi.org/10.1016/j.jcrysgro.2014.10.027
https://doi.org/10.1016/j.jcrysgro.2014.10.027
Autor:
Yoshinobu Aoyagi, Noriko Kurose, Itaru Kamiya, Fumihiko Yamada, Naotaka Iwata, Teuku Muhammad Roffi, Kota Matsumoto
Publikováno v:
AIP Advances, Vol 8, Iss 1, Pp 015329-015329-5 (2018)
A method for laser-induced local p-type activation of an as-grown Mg-doped GaN sample with a high lateral resolution is developed for realizing high power vertical devices for the first time. As-grown Mg-doped GaN is converted to p-type GaN in a conf
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::50c11dc70c03c845807710949e751d5e
https://doi.org/10.1063/1.5009970
https://doi.org/10.1063/1.5009970
Publikováno v:
MRS Proceedings. 1577
Effect of oxygen to nickel molar ratio (O2/Ni) on the crystallinity of atmospheric pressure metal organic chemical vapor deposition (APMOCVD) grown NiO at 500°C is reported. X-ray diffraction (XRD) analysis including grazing incident angle θ of 0.6
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53bbcdad33795b929c1b26b92be9bee9
https://doi.org/10.1557/opl.2013.651
https://doi.org/10.1557/opl.2013.651
Publikováno v:
ICEEI
This paper presents a new, unique two-dimensional 8 × 8-point DCT architecture design which employs direct 2-D DCT approach with regular butterfly structure. The architecture employs eight 1-D DCT processors and four post-addition stages to calculat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c51c27c1ff2b6fc9e56e4c55735d003
https://doi.org/10.1109/iceei.2011.6021587
https://doi.org/10.1109/iceei.2011.6021587