Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Teu-Hua Lin"'
Autor:
Wei Hwang, Yan-Pin Huang, Kuan-Neng Chen, Ho-Ming Tong, Ching-Te Chuang, Yu-San Chien, Ruoh-Ning Tzeng, Jin-Chern Chiou, Ming-Shaw Shy, Teu-Hua Lin, Kou-Hua Chen, Chi-Tsung Chiu
Publikováno v:
IEEE Transactions on Electron Devices. 61:1131-1136
Low-temperature (170°C) Cu/In wafer-level and chip-level bonding for good thermal budget has been successfully developed for 3-D integration applications. For the well-bonded interconnect, Cu2In and Cu7In3 phases with high melting temperature of 388
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1b39e348f8034af42707b711269c85bf
https://doi.org/10.1109/ted.2014.2304778
https://doi.org/10.1109/ted.2014.2304778
Autor:
Ching-Te Chuang, Jin-Chern Chiou, Teu-Hua Lin, Ming-Shaw Shy, Ruoh-Ning Tzeng, Yan-Pin Huang, Yu-San Chien, Wei Hwang, Ho-Ming Tong, Kuan-Neng Chen, Kou-Hua Chen, Chi-Tsung Chiu
Publikováno v:
IEEE Electron Device Letters. 34:1551-1553
A novel CMOS-compatible bond structure using Cu-to-Cu bonding with Ti passivation is demonstrated at low temperature and investigated. With the Ti protection of inner Cu, Cu bonding temperature can be reduced to 180 °C. In addition, excellent electr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7a9dd53e4ae2c6adcaa2c3859c3d4439
https://doi.org/10.1109/led.2013.2285702
https://doi.org/10.1109/led.2013.2285702
Autor:
Kou-Hua Chen, Ching-Te Chuang, Teu-Hua Lin, Yu-San Chien, Ruoh-Ning Tzeng, Ho-Ming Tong, Wei Hwang, Yan-Pin Huang, Kuan-Neng Chen, Ming-Shaw Shy, Chi-Tsung Chiu
Publikováno v:
3DIC
Three types of bonding, including Cu-In, Sn/In-Cu, and Cu/Ti-Ti/Cu, are investigated for the application of 3D interconnects. Cu-In bonding and Sn/In-Cu bonding can form intermetallic compounds at the bonding temperature lower than 180 °C. In additi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a5e8ae4fb2a0b233b0d45c3894cda71
https://doi.org/10.1109/3dic.2013.6702319
https://doi.org/10.1109/3dic.2013.6702319
Autor:
Chi-Tsung Chiu, Ming-Shaw Shy, Kuan-Neng Chen, Kou-Hua Chen, Wei Hwang, Teu-Hua Lin, Yu-San Chien, Yan-Pin Huang, Ruoh-Ning Tzeng, Jin-Chern Chiou, Ho-Ming Tong, Ching-Te Chuang
Publikováno v:
2013 IEEE International Interconnect Technology Conference - IITC.
A low temperature bonding technology of Sn/In composite solder bonded to Cu interconnect is proposed and investigated. The intermetallic compounds formed in the bonded interconnects can survive well in the following process. The Sn/In-Cu interconnect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd7a8efef52e2009b40beb2b5bd2b241
https://doi.org/10.1109/iitc.2013.6615572
https://doi.org/10.1109/iitc.2013.6615572
Low temperature (<180°C) wafer-level and chip-level In-to-Cu and Cu-to-Cu bonding for 3D integration
Autor:
Ching-Te Chuang, Yu-San Chien, Teu-Hua Lin, Chi-Tsung Chiu, Ruoh-Ning Tzeng, Kou-Hua Chen, Ho-Ming Tong, Ming-Shaw Shy, Kuan-Neng Chen, Jin-Chern Chiou, Yan-Pin Huang, Wei Hwang
Publikováno v:
2013 IEEE 63rd Electronic Components and Technology Conference.
Two bonded structures, Cu/In bonding and Cu-Cu bonding with Ti passivation, were investigated for the application of 3D interconnects. For Cu/In bonding, the bonds were achieved at 170°C due to the isothermal solidification. The intermetallic compou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f105ff458e03e1804ce7a54720eb2882
https://doi.org/10.1109/ectc.2013.6575718
https://doi.org/10.1109/ectc.2013.6575718