Zobrazeno 1 - 10
of 187
pro vyhledávání: '"Tetyana Torchynska"'
Publikováno v:
AIMS Materials Science, Vol 3, Iss 1, Pp 204-213 (2016)
The photoluminescence (PL), Raman scattering and SEM images for the mixture of ZnO + 3% C nanocrystals (NCs) have been studied before and after of intensive mechanical processing (MP) with the aim to identify the nature of defects. The study reflects
Externí odkaz:
https://doaj.org/article/f82284ef29fa4834a284a8b5cec89459
Autor:
R. Cisneros Tamayo, Tetyana Torchynska, Georgiy Polupan, A. Escobosa Echavarría, I.J. Guerrero Moreno
Publikováno v:
Journal of Electronic Materials. 50:4633-4641
The impact of annealing on the emission of InAs quantum dots (QDs) has been investigated in the GaAs/Al0.30Ga0.70As structures with different compositions of the quantum well (QW) layers covered of QDs: GaAs or Al0.10Ga0.75In0.15As. The heat treatmen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65244d6952705108f86125d4475d839d
https://doi.org/10.1007/s11664-021-09007-2
https://doi.org/10.1007/s11664-021-09007-2
Publikováno v:
ECS Transactions. 102:113-119
The Al0.30Ga0.70As /InGaAs/AlGaInAs/ Al0.30Ga0.70As structures with embedded InAs quantum dots (QDs) covered by strain reduced AlGaInAs capping layers have been investigated in an as-grown state using the photoluminescence (PL) and high resolution X
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f262a21a84e6801a607f19c7e1fbc21a
https://doi.org/10.1149/10203.0113ecst
https://doi.org/10.1149/10203.0113ecst
Autor:
Lyudmyla Shcherbyna, Georgiy Polupan, Brahim El Filali, Chetzyl I. Ballardo Rodriguez, Tetyana Torchynska, Jose Luis Casas Espinola
Publikováno v:
MRS Advances. 5:3015-3022
ZnO films grown by ultrasonic spray pyrolysis with different Ga contents in the range of 1.0-6.5 at% on quartz substrates have been studied. The ZnO:Ga films were annealed at 400°C for 4h in a nitrogen flow. Morphology, emission, transmittance, abso
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2248d9b8e1e595edf311b7267d186db3
https://doi.org/10.1557/adv.2020.403
https://doi.org/10.1557/adv.2020.403
Publikováno v:
Journal of Materials Science: Materials in Electronics. 31:7539-7546
The effect of plasmon–phonon interaction on the vibrational properties of the MgxZn1-xO films on anisotropic substrate is studied versus Mg content (x), film thickness (0.5–20 μm), free carrier concentration (1×1016–5×1018 cm−3) and dampin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc5f4aeeb0cd614ea634a74b9ca83648
https://doi.org/10.1007/s10854-020-03110-6
https://doi.org/10.1007/s10854-020-03110-6
Autor:
Leonardo G. Vega Macotela, Georgiy Polupan, Tetyana Torchynska, Arturo Escobosa Echavarría, Ricardo Cisneros Tamayo
Publikováno v:
Journal of Materials Science: Materials in Electronics. 31:2643-2649
GaAs/Al0.30Ga0.70As/AlGaInAs/ heterostructures grown by molecular beam epitaxy with embedded InAs quantum dots (QDs) have been investigated before and after thermal annealing at 640 °C for 2 h. Two types of QD structures with the different compositi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70d6a1e2fdca24de1fc530026582beca
https://doi.org/10.1007/s10854-019-02803-x
https://doi.org/10.1007/s10854-019-02803-x
Autor:
Tetyana Torchynska, Ricardo Cisneros-Tamayo, Georgiy Polupan, Andreas Stintz, Arturo Escobosa Echavarria
Publikováno v:
ECS Journal of Solid State Science and Technology. 11:094002
The parameters of quantum dots (QDs) of InAs inserted in Al0.30Ga0.70As/GaAs hetero structures with additional cap/buffer AlGaInAs quantum wells (QWs) of different compositions have been investigated by photoluminescence, transmission electron micros
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e724fe31d878eb31b886f777e6dec1c
https://doi.org/10.1149/2162-8777/ac8bf5
https://doi.org/10.1149/2162-8777/ac8bf5
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 113:137-142
ZnO nanocrystal (NC) films grown by ultrasonic spray pyrolysis , doped with the In atoms in different concentrations and annealed at 400 °C for 4 h in nitrogen flow have been studied. The scanning electron microscopy (SEM), X ray diffraction (XRD),
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::18f8c0eea8a322d6528e5ad64f1ad003
https://doi.org/10.1016/j.physe.2019.05.014
https://doi.org/10.1016/j.physe.2019.05.014
Publikováno v:
Materials Science in Semiconductor Processing. 96:161-166
This work focuses on the investigation of near band edge (NBE) and Er ion related emissions, morphology and structure of Er-doped ZnO nanocrystal (NC) films prepared by ultrasonic spray pyrolysis with the different Er contents. The scanning electroni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a66fa68bc62ef7443b1e6a84ac5f5d05
https://doi.org/10.1016/j.mssp.2019.03.001
https://doi.org/10.1016/j.mssp.2019.03.001
Publikováno v:
Optical Materials. 89:322-328
In-doped ZnO films grown by ultrasonic spray pyrolysis have been studied by means of the scanning electron microscopy (SEM), energy dispersive X ray spectroscopy (EDS) and X ray diffraction (XRD) methods. The photoluminescence (PL), transmittance and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::939117ff2367af4c864679a7fb35c620
https://doi.org/10.1016/j.optmat.2019.01.056
https://doi.org/10.1016/j.optmat.2019.01.056