Zobrazeno 1 - 10
of 57
pro vyhledávání: '"Tettamanzi, G. C."'
Autor:
Rossi, A., Klochan, J., Timoshenko, J., Hudson, F. E., Möttönen, M., Rogge, S., Dzurak, A. S., Kashcheyevs, V., Tettamanzi, G. C.
Publikováno v:
Nano Letters 18, 4141 (2018)
In quantum metrology, semiconductor single-electron pumps are used to generate accurate electric currents with the ultimate goal of implementing the emerging quantum standard of the ampere. Pumps based on electrostatically defined tunable quantum dot
Externí odkaz:
http://arxiv.org/abs/1803.00791
Publikováno v:
Scientific Reports 7, 44371 (2017)
Single-electron pumps based on isolated impurity atoms have recently been experimentally demonstrated. In these devices the Coulomb potential of an atom creates a localised electron state with a large charging energy and considerable orbital level sp
Externí odkaz:
http://arxiv.org/abs/1607.08696
Autor:
Rossi, A., Tanttu, T., Tan, K. Y., Iisakka, I., Zhao, R., Chan, K. W., Tettamanzi, G. C., Rogge, S., Dzurak, A. S., Möttönen, M.
Publikováno v:
Nano Letters (2014), 14(6), pp. 3405-3411
Nanoscale single-electron pumps can be used to generate accurate currents, and can potentially serve to realize a new standard of electrical current based on elementary charge. Here, we use a silicon-based quantum dot with tunable tunnel barriers as
Externí odkaz:
http://arxiv.org/abs/1406.1267
Publikováno v:
New J. Phys. 16 (2014) 063036
Presented in this paper is a proof-of-concept for a new approach to single electron pumping based on a Single Atom Transistor (SAT). By charge pumping electrons through an isolated dopant atom in silicon, precise currents of up to 160 pA at 1 GHz are
Externí odkaz:
http://arxiv.org/abs/1401.3080
This paper discusses how classical transport theories such as the thermionic emission, can be used as a powerful tool for the study and the understanding of the most complex mechanisms of transport in Fin Field Effect Transistors (FinFETs). By means
Externí odkaz:
http://arxiv.org/abs/1111.5655
Autor:
Lansbergen, G. P., Rahman, R., Tettamanzi, G. C., Verduijn, J., Hollenberg, L. C. L., Klimeck, G., Rogge, S.
Ultra-scaled FinFET transistors bear unique fingerprint-like device-to-device differences attributed to random single impurities. This paper describes how, through correlation of experimental data with multimillion atom tight-binding simulations usin
Externí odkaz:
http://arxiv.org/abs/1111.4238
Autor:
Rahman, R., Lansbergen, G. P., Verduijn, J., Tettamanzi, G. C., Park, S. H., Collaert, N., Biesemans, S., Klimeck, G., Hollenberg, L. C. L., Rogge, S.
Publikováno v:
Physical Review B 84, 115428 (2011)
We present atomistic simulations of the D0 to D- charging energies of a gated donor in silicon as a function of applied fields and donor depths and find good agreement with experimental measure- ments. A self-consistent field large-scale tight-bindin
Externí odkaz:
http://arxiv.org/abs/1107.2701
Autor:
Tettamanzi, G. C., Verduijn, J., Lansbergen, G. P., Blaauboer, M., Calderón, M. J., Aguado, R., Rogge, S.
Publikováno v:
Phys. Rev. Lett. 108, 046803 (2012)
Semiconductor nano-devices have been scaled to the level that transport can be dominated by a single dopant atom. In the strong coupling case a Kondo effect is observed when one electron is bound to the atom. Here, we report on the spin as well as or
Externí odkaz:
http://arxiv.org/abs/1102.2977
Autor:
Lansbergen, G. P., Rahman, R., Verduijn, J., Tettamanzi, G. C., Collaert, N., Biesemans, S., Klimeck, G., Hollenberg, L. C. L., Rogge, S.
Publikováno v:
Physical Review Letters 107, 136602 (2011)
We report the observation of Lifetime Enhanced Transport (LET) based on perpendicular valleys in silicon by transport spectroscopy measurements of a two-electron system in a silicon transistor. The LET is manifested as a peculiar current step in the
Externí odkaz:
http://arxiv.org/abs/1008.1381
Autor:
Johnson, B. C., Tettamanzi, G. C., Alves, A. D. C., Thompson, S., Yang, C., Verduijn, J., Mol, J. A., Wacquez, R., Vinet, M., Sanquer, M., Rogge, S., Jamieson, D. N.
Publikováno v:
Appl. Phys. Lett. 96, 264102 (2010)
We demonstrate single dopant implantation into the channel of a silicon nanoscale metal-oxide-semiconductor field-effect-transistor. This is achieved by monitoring the drain current modulation during ion irradiation. Deterministic doping is crucial f
Externí odkaz:
http://arxiv.org/abs/1007.5190