Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Tetsuya Sakazaki"'
Autor:
Hitoshi Kosugi, Ihsan Simms, Antonio Rotondaro, Derek W. Bassett, Tetsuya Sakazaki, Trace Hurd
Publikováno v:
ECS Transactions. 92:127-135
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd51d4d59d632252d84d39736551c7b5
https://doi.org/10.1149/09202.0127ecst
https://doi.org/10.1149/09202.0127ecst
Autor:
Tetsuya Sakazaki, Hitoshi Kosugi, Derek W Bassett, Ihsan Simms, Antonio Rotondaro, Trace Hurd
Publikováno v:
ECS Meeting Abstracts. :1108-1108
Semiconductor technology is currently facing the challenge of processing structures with nanometer scale openings and high aspect ratios (HAR) in order to enable the manufacture of 3D nano-devices like FINFETs, 3D-NAND cells and DRAM capacitors. Simu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::919c1a1076687ead0d750d7200b79a90
https://doi.org/10.1149/ma2019-02/23/1108
https://doi.org/10.1149/ma2019-02/23/1108