Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Tetsuya Miyatake"'
Autor:
Tetsuya Miyatake, Toshio Fujii, Prafula Masalkar, Yoshihiro Miyamoto, Hironori Nishino, Yusuke Matsukura
Publikováno v:
Infrared Physics & Technology. 45:1-7
We investigated the performance of a 640 × 480 pixel quantum well infrared photodetectors focal plane array (QWIP-FPA) when an elliptical-curve random grating was used as the optical coupler for the QWIP. The design of the elliptical random coupler
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fdc70cd178a8015f8a26ea761ab84a6e
https://doi.org/10.1016/s1350-4495(03)00136-1
https://doi.org/10.1016/s1350-4495(03)00136-1
Autor:
Chihiro Hamaguchi, Hiromu Kato, M. Yamaguchi, Toshimasa Matsuoka, Kenji Taniguchi, Tomoki Ohya, Takeshi Nakazawa, Y. Watanabe, Tetsuya Miyatake
Publikováno v:
Surface Science. 267:470-473
Photoreflectance and photoluminescence measurements are carried out to clarify the optical properties of (GaAs)n/(AlAs)n (n = 3–15) superlattices. Weak signals of photoreflectance associated with the critical point of the pseudodirect transition (w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33375c24fd56c68fe27acc7e31e62f62
https://doi.org/10.1016/0039-6028(92)91179-f
https://doi.org/10.1016/0039-6028(92)91179-f
Autor:
Toshio Fujii, Yasuhito Uchiyama, Yusuke Matsukura, Hironori Nishino, Tetsuya Miyatake, Kousaku Yamamoto
Publikováno v:
SPIE Proceedings.
We investigated the behavior of the dark current (Id) in quantum well infrared photodetectors (QWIPs) in which the barrier layers were selectively doped instead of the well layers. Because the selective doping bends the conduction band (CB) edge in t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::296fa6b416d12fcef60c6080ef526d4a
https://doi.org/10.1117/12.478844
https://doi.org/10.1117/12.478844
Publikováno v:
SPIE Proceedings.
We have investigated the reverse current-voltage characteristics of both 3 - 5 micrometer and 8 - 10 micrometer band HgCdTe photodiodes under background illumination in the temperature range of 40 K to 120 K. The experimental results show that the di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::940b5ada5a333f56c3f33178d9b23f86
https://doi.org/10.1117/12.280322
https://doi.org/10.1117/12.280322