Zobrazeno 1 - 10
of 101
pro vyhledávání: '"Tetsuya Akasaka"'
Publikováno v:
Journal of Crystal Growth. 468:821-826
Hillocks on N-face GaN (000 1 ¯ ) films are effectively eliminated by group-III-source flow-rate modulation epitaxy (FME), wherein the flow-rate of group-III sources are sequentially modulated under a constant supply of NH 3 . A hillock-free smooth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1813647dbdc92c1e624f2479f7dd17a
https://doi.org/10.1016/j.jcrysgro.2016.11.107
https://doi.org/10.1016/j.jcrysgro.2016.11.107
Publikováno v:
2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS).
We investigated the surface morphologies of nonpolar m-plane AlN homoepitaxial layers grown by the flow-rate modulation epitaxy (FME) method. As source supply sequences, we adopted conventional metal-organic chemical vapor deposition (MOCVD) and thre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::356500a56727c957564f57d212e7a2ae
https://doi.org/10.1109/iciprm.2016.7528771
https://doi.org/10.1109/iciprm.2016.7528771
Autor:
Tetsuya Akasaka, Kyoichi Suzuki
Publikováno v:
Japanese Journal of Applied Physics. 57:111001
The transport properties in an AlN/GaN single heterostructure grown on a GaN substrate were investigated over a temperature range between 0.25 and 300 K under magnetic fields of up to 15 T. The electron density was successfully controlled over the en
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b5ba9167d1145eee3acc1dde29c24c41
https://doi.org/10.7567/jjap.57.111001
https://doi.org/10.7567/jjap.57.111001
Publikováno v:
Applied Physics Express. 11:081001
N-face double heterostructures (DHs) composed of 30-nm-thick InN layers sandwiched with GaN buffer and cap layers were grown by metalorganic vapor phase epitaxy. A high InN growth temperature is necessary for obtaining good radiative properties in th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f39ce5fd8c74d7b83ec35d96009b39d5
https://doi.org/10.7567/apex.11.081001
https://doi.org/10.7567/apex.11.081001
Publikováno v:
Hyomen Kagaku. 31:99-105
Hexagonal BN (h-BN) is graphite-like sp2-bonded crystal phase, which is the most stable among crystalline BN phases, and has a potential for optical device applications in the deep ultraviolet spectral region. Crystalline phase of BN film grown on a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9218bf8983261fa176b746008ba4cbe7
https://doi.org/10.1380/jsssj.31.99
https://doi.org/10.1380/jsssj.31.99
Publikováno v:
Journal of Crystal Growth. 311:3054-3057
We demonstrate hexagonal boron nitride ( h -BN) epitaxial growth on Ni(1 1 1) substrate by molecular beam epitaxy (MBE) at 890 °C. Elemental boron evaporated by an electron-beam gun and active nitrogen generated by a radio-frequency (RF) plasma sour
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::113c065a7947f9913be342a909c20388
https://doi.org/10.1016/j.jcrysgro.2009.01.077
https://doi.org/10.1016/j.jcrysgro.2009.01.077
Publikováno v:
Journal of Crystal Growth. 310:5048-5052
Hexagonal boron nitride (h-BN) has a potential for optical device applications in the deep ultraviolet spectral region. For several decades, only amorphous and turbostratic boron nitride (BN) films had been grown by chemical vapor deposition and meta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ddf550b93b5f266815595c27518a635d
https://doi.org/10.1016/j.jcrysgro.2008.07.057
https://doi.org/10.1016/j.jcrysgro.2008.07.057
Autor:
Tetsuya Akasaka, Yoshihiro Kobayashi
Publikováno v:
Journal of Crystal Growth. 310:5044-5047
Hexagonal boron nitride (h-BN) epitaxial films were successfully grown on (0 0 0 1) sapphire substrate by metalorganic vapor phase epitaxy (MOVPE). BN films were grown using triethylboron and ammonia (NH 3 ) at various V/III ratios ranging from 210 t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d2cf55ce5005b665531adbefac7bc138
https://doi.org/10.1016/j.jcrysgro.2008.07.010
https://doi.org/10.1016/j.jcrysgro.2008.07.010
Publikováno v:
physica status solidi (b). 244:1789-1792
We report room-temperature (RT) observation of near-band-gap ultraviolet luminescence at a wavelength of 227 nm in cathodoluminescence from h-BN heteroepitaxial layers. The h-BN layers were grown on single crystal Ni(111) substrates by flow-rate modu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9343985c157fe462493e772f89b6e116
https://doi.org/10.1002/pssb.200674773
https://doi.org/10.1002/pssb.200674773
Autor:
Tetsuya Akasaka, Toshiki Makimoto, Hideki Gotoh, Yoshihiro Kobayashi, Hayato Nakano, Takehiko Tawara
Publikováno v:
physica status solidi c. 4:2350-2353
We report on narrow photoluminescence (PL) spectra obtained from spatially localized excitons in InGaN quantum wells (QW). These PL lines (less than 1 meV wide) are clearly detected in QWs on several buffer structures and substrates with the micro-PL
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f595174dae42a014f64c5300b919c212
https://doi.org/10.1002/pssc.200674756
https://doi.org/10.1002/pssc.200674756