Zobrazeno 1 - 10
of 143
pro vyhledávání: '"Tetsushi Sakai"'
Autor:
Tetsushi Sakai, Ed McCurdy
Publikováno v:
Spectroscopy. :16-22
Inductively coupled plasma–mass spectrometry (ICP-MS) is a technique increasingly being used in commercial laboratories and industries that analyze samples with complex matrices, such as seawater, wastewater, saline groundwater, and other high salt
Autor:
Silvia Diez-Fernández, Jorge Ruiz Encinar, Juan J. Calvete, Tetsushi Sakai, Michiko Yamanaka, Alfredo Sanz-Medel, Naoki Sugiyama, Francisco Calderón-Celis
Publikováno v:
RUO. Repositorio Institucional de la Universidad de Oviedo
instname
Digital.CSIC. Repositorio Institucional del CSIC
instname
Digital.CSIC. Repositorio Institucional del CSIC
Tools that provide absolute quantification of biomolecules, particularly of proteins and their post-translational modifications, without needing suitable specific standards, are urgently demanded nowadays. To this end, we have significantly improved
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e6565ad832b5a77dffc39cf4acb62c54
http://hdl.handle.net/10651/51085
http://hdl.handle.net/10651/51085
Autor:
Tetsushi Sakai, Shun-ichiro Ohmi
Publikováno v:
IEICE Trans. Electron.. (1):994-999
Twin-Channel (TC)-MOSFET with twin omega-gate (Ω-gate) Si channels and its fabrication process were proposed. The twin Si channels are able to be fabricated by self-aligned process utilizing wet etching of SiN and silicon-on-insulator (SOI) wafers.
Autor:
Hiroo Omi, Yasuo Takahashi, Tetsushi Sakai, Masao Sakuraba, Hiroyuki Ohri, Shinya Morita, Junichi Murota, Shun-ichiro Ohmi, Takashi Yamazaki
Publikováno v:
Materials Science in Semiconductor Processing. 8:59-63
We propose and describe a novel method called separation by bonding Si islands (SBSI) that can be used to form silicon-on-insulator (SOI) and isolation regions simultaneously. The Si islands are formed by selectively etching the SiGe layer of Si/SiGe
Autor:
Tetsushi Sakai, Hiroo Omi, Masao Sakuraba, Junichi Murota, Hiroyuki Ohri, Shun-ichiro Ohmi, Takashi Yamazaki, Shinya Morita
Publikováno v:
IEICE Trans. Electron.. :656-661
We have developed separation by bonding Si islands (SBSI) process for advanced CMOS LSI applications. In this process, the Si islands that become the S01 regions are formed by selective etching of the SiGe layer in the Si/SiGe stacked layers, and tho
Publikováno v:
Applied Surface Science. 224:270-273
A multi-layer channel MOSFET (ML-MOSFET) and its fabrication process were proposed for future CMOS application. ML-MOSFET has multi-Si channel layers stacked vertically, so that the drain current per 1 μm gate width on wafer is expected to increase
Publikováno v:
Applied Organometallic Chemistry. 15:285-290
Two simple methods fear the simultaneous separation of anionic and cationic arsenic species in a single injection were developed. One method was a dual column system connected with anion and cation exchange columns; the other was a dual mode system.
Autor:
Yukiko Date, Naoto Shimizu, Koichi Kuroda, Ginji Endo, Tetsushi Sakai, Yoshinori Inoue, Kaoru Yoshida, Hua Chen
Publikováno v:
Applied Organometallic Chemistry. 13:81-88
The potential of liquid chromatography-mass spectrometry (LC-MS) using electrospray ionization (ESI) was investigated for the identification and quantification of organoarsenic species excreted in rats urine chronically exposed to dimethylarsinic aci
Autor:
Tetsushi Sakai, Hiroki Kumagai, Toshiro Yokoyama, Michiko Yamanaka, Toshishige M. Suzuki, Takashi Suzuki
Publikováno v:
Journal of Analytical Atomic Spectrometry. 13:579-582
Trace metals in sea-water were determined by ion chromatography (IC)–inductively coupled plasma mass spectrometry (ICP-MS). A nitrilotriacetate (NTA)-type chelating resin was applied to the separation and enrichment of the analyte metal ions. Trans
Autor:
Satoshi Nakayama, Tetsushi Sakai
Publikováno v:
Journal of The Electrochemical Society. 144:4326-4330
Effects of nitrogen in p + polysilicon gates on boron penetration into a silicon substrate through the gate oxide are studied. Four factors that might be involved in how nitrogen in the polysilicon gate suppresses boron penetration were investigated: