Výsledky vyhledávání - "Tetsuro Kunii"

Selective area chemical beam epitaxial regrowth of Si-doped GaAs by using silicon tetraiodide for field effect transistor application

Autor: Yoshitsugu Yamamoto, Mutsuyuki Otsubo, Shigekazu Izumi, Norio Hayafuji, Kazuhiko Sato, Tetsuro Kunii, Shinichi Miyakuni

Publikováno v: Journal of Crystal Growth. :404-410

Selective area regrowth of silicon-doped GaAs has been successfully achieved by chemical beam epitaxy (CBE) on dry etched trench structures. Abrupt doping-interface and excellent doping controllability have also been achieved by using a novel silicon

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::b22190d3fdabd1f002a192419c9e6372
https://doi.org/10.1016/s0022-0248(96)00874-3

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