Zobrazeno 1 - 10
of 19
pro vyhledávání: '"Tetsuo Oda"'
Publikováno v:
IEEE Transactions on Electron Devices. 68:3505-3512
This article describes an analysis of the electric-field-dependence mechanism for cosmic ray failure in power semiconductor devices. Two major modes for the failure have been reported. One is bipolar transistor activation caused by carrier generation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd0a97096aa1ac5a02ae088cdf8be341
https://doi.org/10.1109/ted.2021.3077208
https://doi.org/10.1109/ted.2021.3077208
Autor:
Tetsuo Oda, Toru Masuda, Takashi Ishigaki, Seiichi Hayakawa, Tatsunori Murata, Yuji Takayanagi
Publikováno v:
IEEE Transactions on Electron Devices. 67:2035-2043
A 3.3-kV diode-less (D-less) SiC power module adopting a “next high power density dual package” (named nHPD2) was developed. Configuring the module with SiC metal–oxide–semiconductor field-effect transistors (MOSFETs) only resulted in the ult
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa2239cdf108b1a25cdcd9ecac47f2ec
https://doi.org/10.1109/ted.2020.2978218
https://doi.org/10.1109/ted.2020.2978218
Autor:
Soichiro Minami, Yosuke Kawashima, Yasuhiko Munakata, Masahiro Matsuno, Shuichiro Hara, Yusuke Yamazaki, Tsuyoshi Doman, Shin Saito, Tetsuo Odaka, Takahiro Ogasawara, Hisashi Shimizu, Jun Sugisaka, Tomoiki Aiba, Yukihiro Toi, Shinsuke Yamanda, Yuichiro Kimura, Shunichi Sugawara
Publikováno v:
Cancer Reports, Vol 7, Iss 7, Pp n/a-n/a (2024)
ABSTRACT Background The expansion of preoperative immunochemotherapy has led to an increase in the number of patients with lung cancer receiving immune checkpoint inhibitors (ICIs). Therefore, oncologists should manage a variety of immune‐related a
Externí odkaz:
https://doaj.org/article/5543c1d253ce41568754fb0610f4abf2
Publikováno v:
IEEE Transactions on Aerospace and Electronic Systems. 53:1384-1401
形態: カラー図版あり
Physical characteristics: Original contains color illustrations
This work was partially supported by JSPS KAKENHI under Grant JP22560779 and Grant JP26289320.
資料番号: PA1710064000
Physical characteristics: Original contains color illustrations
This work was partially supported by JSPS KAKENHI under Grant JP22560779 and Grant JP26289320.
資料番号: PA1710064000
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::126264546d3946a58ef11dd494910d4f
https://doi.org/10.1109/taes.2017.2671247
https://doi.org/10.1109/taes.2017.2671247
Autor:
Tatsunori Murata, Kumiko Konishi, Yuki Mori, Takahiro Morikawa, Koyo Kinoshita, Tetsuo Oda, Fujita Ryuusei, Takashi Ishigaki, Akio Shima
Publikováno v:
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).
We have developed a 3.3 kV ultra-high power density SiC power module, which was realized by fulfilment with only SiC-MOSFETs. As a countermeasure for bipolar degradation issues related to body diodes in the MOSFET structure, a high throughput screeni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0966216ebbe97bd734b27d73995a223f
https://doi.org/10.1109/ispsd.2019.8757598
https://doi.org/10.1109/ispsd.2019.8757598
Autor:
Yosuke Murakami, Yosuke Kawashima, Shinji Chiba, Shuichiro Hara, Yusuke Yamazaki, Tsuyoshi Doman, Shin Saito, Tetsuo Odaka, Takahiro Ogasawara, Hisashi Shimizu, Jun Sugisaka, Tomoiki Aiba, Yukihiro Toi, Shinsuke Yamanda, Yuichiro Kimura, Shunichi Sugawara
Publikováno v:
Cancer Reports, Vol 7, Iss 2, Pp n/a-n/a (2024)
Abstract Background Anaplastic lymphoma kinase (ALK)‐positive lung cancer has a better long‐term prognosis with ALK‐inhibitor than other lung cancers. However, resistance to ALK‐inhibitors and the control of metastases in the central nervous
Externí odkaz:
https://doaj.org/article/6a69036d500340d1912700c168116d18
Autor:
Hiroshi Miki, Kan Yasui, Takashi Hirao, Yoshiaki Toyota, Mutsuhiro Mori, Hiroyuki Okino, Jiro Hasegawa, Kazuhiro Mochizuki, Norifumi Kameshiro, Tetsuo Oda, Hiroyuki Matsuhima, Hidekatsu Onose, Renichi Yamada, Natsuki Yokoyama
Publikováno v:
Materials Science Forum. 858:1091-1094
A 3.3-kV SiC-Si hybrid module, composed of a low-forward-voltage (VF) SiC junction-barrier-Schottky (JBS) diode and a low-saturation-voltage VCE(sat) Si trench IGBT was fabricated and demonstrated highly efficient operation.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdf4d79007fa28bd29bb769693e280db
https://doi.org/10.4028/www.scientific.net/msf.858.1091
https://doi.org/10.4028/www.scientific.net/msf.858.1091
Publikováno v:
2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).
We have proposed the concept of thin layer SOI devices with stepped field plates to obtain a low on-resistance LDMOSFET. Thin layer SOI devices can acquire a high breakdown voltage because the ionization integral over the vertical path may be neglect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f70a648c4404c04797341d625df0557e
https://doi.org/10.23919/ispsd.2017.7988965
https://doi.org/10.23919/ispsd.2017.7988965
Autor:
Hiroki Yamashita, Tomoyuki Utsumi, Tetsuo Oda, S. Wada, Junichi Sakano, Kenji Sakurai, Kenji Hara
Publikováno v:
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
A 600V three-phase single chip inverter IC has been developed using a new SOI technology instead of conventional 500V Dielectric Isolation (DI) technology. In this new technology, 600V high voltage devices were materialized with a newly introduced po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::283c4ebf634147acef67e54c77664f9f
https://doi.org/10.1109/ispsd.2014.6856065
https://doi.org/10.1109/ispsd.2014.6856065
Autor:
Yasushi Toyoda, Masashi Shinagawa, Katsunori Azuma, Katsuaki Saito, Tetsuo Oda, Yoshiaki Toyota, Mutsuhiro Mori, So Watanabe, Masatoshi Wakagi, Yuji Shima, Taiga Arai
Publikováno v:
2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
Novel 3.3-kV trench IGBT with low loss and low dvAK/dt noise was developed. The structural feature of the IGBTs is deep p-WELL layers separated from trench gates. This structure suppresses excess VGE overshoot and then reduces recovery dvAK/dt. Moreo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::830f0c5d77b375b86dc04658e4448092
https://doi.org/10.1109/ispsd.2013.6694391
https://doi.org/10.1109/ispsd.2013.6694391