Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Tetsuo Oda"'
Publikováno v:
IEEE Transactions on Electron Devices. 68:3505-3512
This article describes an analysis of the electric-field-dependence mechanism for cosmic ray failure in power semiconductor devices. Two major modes for the failure have been reported. One is bipolar transistor activation caused by carrier generation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd0a97096aa1ac5a02ae088cdf8be341
https://doi.org/10.1109/ted.2021.3077208
https://doi.org/10.1109/ted.2021.3077208
Autor:
Tetsuo Oda, Toru Masuda, Takashi Ishigaki, Seiichi Hayakawa, Tatsunori Murata, Yuji Takayanagi
Publikováno v:
IEEE Transactions on Electron Devices. 67:2035-2043
A 3.3-kV diode-less (D-less) SiC power module adopting a “next high power density dual package” (named nHPD2) was developed. Configuring the module with SiC metal–oxide–semiconductor field-effect transistors (MOSFETs) only resulted in the ult
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aa2239cdf108b1a25cdcd9ecac47f2ec
https://doi.org/10.1109/ted.2020.2978218
https://doi.org/10.1109/ted.2020.2978218
Publikováno v:
IEEE Transactions on Aerospace and Electronic Systems. 53:1384-1401
形態: カラー図版あり
Physical characteristics: Original contains color illustrations
This work was partially supported by JSPS KAKENHI under Grant JP22560779 and Grant JP26289320.
資料番号: PA1710064000
Physical characteristics: Original contains color illustrations
This work was partially supported by JSPS KAKENHI under Grant JP22560779 and Grant JP26289320.
資料番号: PA1710064000
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::126264546d3946a58ef11dd494910d4f
https://doi.org/10.1109/taes.2017.2671247
https://doi.org/10.1109/taes.2017.2671247
Autor:
Tatsunori Murata, Kumiko Konishi, Yuki Mori, Takahiro Morikawa, Koyo Kinoshita, Tetsuo Oda, Fujita Ryuusei, Takashi Ishigaki, Akio Shima
Publikováno v:
2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD).
We have developed a 3.3 kV ultra-high power density SiC power module, which was realized by fulfilment with only SiC-MOSFETs. As a countermeasure for bipolar degradation issues related to body diodes in the MOSFET structure, a high throughput screeni
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0966216ebbe97bd734b27d73995a223f
https://doi.org/10.1109/ispsd.2019.8757598
https://doi.org/10.1109/ispsd.2019.8757598
Autor:
Hiroshi Miki, Kan Yasui, Takashi Hirao, Yoshiaki Toyota, Mutsuhiro Mori, Hiroyuki Okino, Jiro Hasegawa, Kazuhiro Mochizuki, Norifumi Kameshiro, Tetsuo Oda, Hiroyuki Matsuhima, Hidekatsu Onose, Renichi Yamada, Natsuki Yokoyama
Publikováno v:
Materials Science Forum. 858:1091-1094
A 3.3-kV SiC-Si hybrid module, composed of a low-forward-voltage (VF) SiC junction-barrier-Schottky (JBS) diode and a low-saturation-voltage VCE(sat) Si trench IGBT was fabricated and demonstrated highly efficient operation.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdf4d79007fa28bd29bb769693e280db
https://doi.org/10.4028/www.scientific.net/msf.858.1091
https://doi.org/10.4028/www.scientific.net/msf.858.1091
Publikováno v:
2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).
We have proposed the concept of thin layer SOI devices with stepped field plates to obtain a low on-resistance LDMOSFET. Thin layer SOI devices can acquire a high breakdown voltage because the ionization integral over the vertical path may be neglect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f70a648c4404c04797341d625df0557e
https://doi.org/10.23919/ispsd.2017.7988965
https://doi.org/10.23919/ispsd.2017.7988965
Autor:
Hiroki Yamashita, Tomoyuki Utsumi, Tetsuo Oda, S. Wada, Junichi Sakano, Kenji Sakurai, Kenji Hara
Publikováno v:
2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
A 600V three-phase single chip inverter IC has been developed using a new SOI technology instead of conventional 500V Dielectric Isolation (DI) technology. In this new technology, 600V high voltage devices were materialized with a newly introduced po
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::283c4ebf634147acef67e54c77664f9f
https://doi.org/10.1109/ispsd.2014.6856065
https://doi.org/10.1109/ispsd.2014.6856065
Autor:
Yasushi Toyoda, Masashi Shinagawa, Katsunori Azuma, Katsuaki Saito, Tetsuo Oda, Yoshiaki Toyota, Mutsuhiro Mori, So Watanabe, Masatoshi Wakagi, Yuji Shima, Taiga Arai
Publikováno v:
2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD).
Novel 3.3-kV trench IGBT with low loss and low dvAK/dt noise was developed. The structural feature of the IGBTs is deep p-WELL layers separated from trench gates. This structure suppresses excess VGE overshoot and then reduces recovery dvAK/dt. Moreo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::830f0c5d77b375b86dc04658e4448092
https://doi.org/10.1109/ispsd.2013.6694391
https://doi.org/10.1109/ispsd.2013.6694391
Publikováno v:
Polymer Journal. 26:551-559
Synthesis and Properties of Aromatic Polyamides and Polyamide–Smectic Oligomer Graft Copolymer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cf19f38a0d5f2ee4d34679c5dae8819b
https://doi.org/10.1295/polymj.26.551
https://doi.org/10.1295/polymj.26.551
Autor:
Mutsuhiro Mori, Katsuaki Saito, Kohsuke Ishibashi, Takashi Harada, Taiga Arai, Tetsuo Oda, Yasushi Toyoda, So Watanabe
Publikováno v:
2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs.
A novel 1.7kV IGBT with deep floating-p layers separated from trench gates has been developed to realize low loss, low EMI noise, and high reliability. Separating floating-p layers from the trench gates reduces excess V GE overshoot, which results in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6010388f38f1c8b2e9883fa9c121c866
https://doi.org/10.1109/ispsd.2011.5890787
https://doi.org/10.1109/ispsd.2011.5890787