Zobrazeno 1 - 10
of 29
pro vyhledávání: '"Tetsuo Muranoi"'
Publikováno v:
Journal of Applied Physics; 5/15/2005, Vol. 97 Issue 10, p10C508-1-10C508-3, 3p, 1 Diagram, 4 Graphs
Publikováno v:
Electronics and Communications in Japan (Part II: Electronics). 81:38-49
The electrostatic discharge (ESD) sensitivities of highly refined ULSIs should be evaluated by a test method based on the direct-charging charged device model (D-CDM) or the field-induced charged device model (F-CDM). The CDM features nanosecond tran
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::102063641af6b0ad3f25dbbe73b37edd
https://doi.org/10.1002/(sici)1520-6432(199804)81:4<38::aid-ecjb5>3.0.co
https://doi.org/10.1002/(sici)1520-6432(199804)81:4<38::aid-ecjb5>3.0.co
Publikováno v:
Applied Surface Science. :485-488
Dye-sensitized indium oxide (In2O3) thick films were prepared by spin coating on ITO glass substrates and their photoelectronic properties were studied. A semitransparent aluminum electrode was vacuum deposited on the In2O3 film, and the photovoltaic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39aebe341915858502e2dda984a21d6b
https://doi.org/10.1016/s0169-4332(96)00882-3
https://doi.org/10.1016/s0169-4332(96)00882-3
Plasma oxidation of Cu, Ti and Ni and the photoelectrochemical properties of the oxide layers formed
Autor:
Ryoichi Urao, Mohammed Rafiqul Islam, Yoshihiro Momose, Tetsuo Muranoi, Manabu Takeuchi, Masayoshi Masui
Publikováno v:
Materials Chemistry and Physics. 43:283-286
Plasma oxidation of Ti, Cu and Ni was carried out using a conventional diode-type glow discharge system. Structural and photoelectrochemical properties of the oxide layers formed were examined. Electron diffraction confirmed the formation of a TiO2,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e71095c99c0be933c969ca04fc0cfc7
https://doi.org/10.1016/0254-0584(95)01631-4
https://doi.org/10.1016/0254-0584(95)01631-4
Autor:
Shoji Matsumoto, Tetsuo Muranoi, Matsuda Masanori, Manabu Takeuchi, Teruaki Higashiguchi, Masaki Satoh, Isao Kikuma, Yoshihiro Momose
Publikováno v:
Applied Surface Science. 92:635-638
In order to increase the hydrophobicity of an organic photoreceptor (OPC) surface for contact charging with a wet polymer roller, surface fluorination treatment was carried out on OPC drums using CF4 rf plasma, and the charging characteristics and su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::af48a80c7e10193e083bcaf7b2e0a513
https://doi.org/10.1016/0169-4332(95)00308-8
https://doi.org/10.1016/0169-4332(95)00308-8
Autor:
Tetsuo Muranoi, Tetsuya Shiohara, Akio Sotokawa, Shuichi Isobe, Nobutaka Kanbe, Hisayoshi Yoshida
Publikováno v:
Journal of Crystal Growth. 146:49-52
Gas effects on the transport rates of ZnSe in closed systems were investigated. An ampoule (10 mm × 90 mm) was fabricated from a quartz tube which had been cleaned in a hydrogen flow at about 1000°C for 5 hours. The source material was polycrystall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fabb97e05d83618c870a5005d9b6d059
https://doi.org/10.1016/0022-0248(94)00477-3
https://doi.org/10.1016/0022-0248(94)00477-3
Publikováno v:
Journal of the Surface Finishing Society of Japan. 46:817-821
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09ba5610ddd04f2736eb6e7931f98af5
https://doi.org/10.4139/sfj.46.817
https://doi.org/10.4139/sfj.46.817
Publikováno v:
Journal of Crystal Growth. 138:255-259
Properties of ZnSe films doped with iodine impurities were investigated. The ZnSe films in most cases were grown at 350°C by using metallic zinc and selenium as the source materials; their vapors were transported separately by H2 gas under atmospher
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22e41ebad60472f39ef17073cf7caa3c
https://doi.org/10.1016/0022-0248(94)90817-6
https://doi.org/10.1016/0022-0248(94)90817-6
Autor:
Tetsuo Muranoi
Publikováno v:
Journal of Crystal Growth. 115:679-682
Photoluminescence and impurity distributions were investigated on ZnSe films. The ZnSe films were grown at 350°C by conventional VPE on (100)GaAs and on p-type ZnSe-film-on-GaAs substrates. Etching in an HCI gas flow at the growth temperature for 5
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d13bea7d4907fd30cecf6e37a70b0253
https://doi.org/10.1016/0022-0248(91)90826-q
https://doi.org/10.1016/0022-0248(91)90826-q
Autor:
Tetsuo Muranoi
Publikováno v:
Thin Solid Films. 197:393-396
A diffusion coefficient was obtained mathematically for a concentration distribution obeying an exponential profile by using the Boltzmann-Matano analysis. The relative diffusion coefficient is given by Dc/D0 = A(1 − ln c) + (1/c) (1 − A), where
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b0fa02edf7d7f0746aab9b21d811ca6
https://doi.org/10.1016/0040-6090(91)90249-w
https://doi.org/10.1016/0040-6090(91)90249-w