Zobrazeno 1 - 10
of 407
pro vyhledávání: '"Tetsuo Endoh"'
Publikováno v:
AIP Advances, Vol 12, Iss 12, Pp 125317-125317-10 (2022)
The influence of the sidewall damage on the thermal stability factor (Δ) of quad-interface magnetic tunnel junctions (quad-MTJs) was investigated through a string method-based micromagnetic simulation. The quad-MTJs consist of a reference layer/MgO-
Externí odkaz:
https://doaj.org/article/41795573fd574cc48385f4879a4ab3f3
Publikováno v:
IEEE Access, Vol 8, Pp 9403-9419 (2020)
Validity evaluation aims to analyze the quality of the clustering algorithm with different measurement criteria. A variety of assessment methods have been introduced in the application of pattern recognition and computer vision. Although it is well k
Externí odkaz:
https://doaj.org/article/64cb16dd921c4131aa98d3fd4bf1c6c1
Publikováno v:
IEEE Access, Vol 8, Pp 142931-142955 (2020)
The emerging of deep neural networks, especially the convolutional neural network (CNN), substantially promotes the fast development of brainware processors in object detection. However, the vast network architecture brings severe challenges to the d
Externí odkaz:
https://doaj.org/article/aed346598d8b4a1a944abca842460891
Publikováno v:
ACS Omega, Vol 4, Iss 25, Pp 21115-21121 (2019)
Externí odkaz:
https://doaj.org/article/a7249f20a2904bf99a92a870244759d1
Publikováno v:
AIP Advances, Vol 11, Iss 2, Pp 025007-025007-6 (2021)
We investigated spin-Hall effect (SHE) and degree of MgO (100) orientation in artificially synthesized (W/Hf)-multilayer/CoFeB/MgO systems with various W thicknesses. We found that the artificially synthesized multilayer systems can enhance the spin-
Externí odkaz:
https://doaj.org/article/507998c393ab4920b6da6745a5303ee5
Publikováno v:
AIP Advances, Vol 10, Iss 7, Pp 075106-075106-7 (2020)
The influence of magnetic damages at the sidewall of perpendicular magnetic tunnel junctions (p-MTJs), which are the core devices of spin-transfer-torque magnetoresistive random-access memory (STT-MRAM), is discussed based on the thermal stability fa
Externí odkaz:
https://doaj.org/article/1a3d9113d15a40c3bea120c84b01dd88
Publikováno v:
AIP Advances, Vol 9, Iss 12, Pp 125312-125312-5 (2019)
We studied spin Hall effect (SHE) in Pt100-xAux with various Au compositions x for Pt-Au/CoFeB systems by means of spin Hall magnetoresistance (SMR). We synthesized low resistive, flat, and highly (111)-textured Pt-Au alloy films by sputtering using
Externí odkaz:
https://doaj.org/article/de58bc31e58c4601b224c755ec1677d8
Autor:
Tetsuo Endoh, Hiroaki Honjo
Publikováno v:
Journal of Low Power Electronics and Applications, Vol 8, Iss 4, p 44 (2018)
Nonvolatile (NV) memory is a key element for future high-performance and low-power microelectronics. Among the proposed NV memories, spintronics-based ones are particularly attractive for applications, owing to their low-voltage and high-speed operat
Externí odkaz:
https://doaj.org/article/d40316a03e88421eb6ad69b830d38599
Publikováno v:
IEEE Transactions on Magnetics. 59:1-8
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1464ca50ff3807c11c6eb2f33141b592
https://doi.org/10.1109/tmag.2022.3142917
https://doi.org/10.1109/tmag.2022.3142917
Publikováno v:
IEEE Transactions on Magnetics. 59:1-6
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c4a15e3d03c0c2a804a104e2a28c1254
https://doi.org/10.1109/tmag.2023.3248488
https://doi.org/10.1109/tmag.2023.3248488