Výsledky vyhledávání - "Tetsu Morooka"

(Invited) Negatively Charged Defects Generated by Rare-Earth Materials Incorporation into HfO2 and the Impact on the Gate Dielectrics Reliability

Autor: Satoshi Kamiyama, K. Yamabe, Tetsu Morooka, Kazuto Ikeda, Keisaku Yamada, Kenji Shiraishi, Motoyuki Sato, Kenji Ohmori, Takeo Matsuki, Yoshihiro Sugita, Takayuki Suzuki, Jiro Yugami, Yuzuru Ohji

Publikováno v: ECS Transactions. 28:237-250

We studied the impact of Yttrium and Lanthanum incorporation into HfO2 on reliability (TDDB, PBTI and 1/f noise). They introduce smaller Weibull β values and early failure in TDDB, with negative shift in PBTI. They are caused by the negatively charg

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9bf80bf1d039fda0ca7bf7668549ac32
https://doi.org/10.1149/1.3372579

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Universal Correlation between Flatband Voltage and Electron Mobility in TiN/HfSiON Devices with MgO or La2O3Incorporation and Stack Variation

Autor: Nobuyuki Mise, Yuzuru Ohji, Takahisa Eimori, Yasuo Nara, Tetsu Morooka, Masaru Kadoshima

Publikováno v: Japanese Journal of Applied Physics. 47:7780-7783

We investigated the controversial effective workfunction and electron mobility of TiN/HfSiON devices by intentionally adding MgO or La2O3 into HfSiON and by changing the material on TiN or the TiN thickness. As a result, we found a close relationship

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3be28e47f1eb99bd0ca4e345caa07a12
https://doi.org/10.1143/jjap.47.7780

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Single Metal/Dual High-k CMISFETs without High-k-induced Vth Variation by MgO or Al2O3 Incorporation

Autor: Tetsuo Ono, Nobuyuki Mise, Takahisa Eimori, Yasuo Nara, Tetsu Morooka, Yuzuru Ohji

Publikováno v: ECS Transactions. 16:11-18

We have proposed single metal/dual high-k (SMDH) CMISFETs for aggressively scaled devices. The low threshold voltage (Vth) for n- and pMISFETs are obtained by the dual high-k gate dielectrics. The common gate stack for n- and pMISFETs (single metal)

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8b8fdc33a331430c6d73c092be48fbc3
https://doi.org/10.1149/1.2981583

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Suppression of Metamorphoses of Metal/High-kGate Stack by Low-Temperature, Cl-Free SiN Offset Spacer, and Its Impact on Scaled Metal–Oxide–Semiconductor Field-Effect Transistors

Autor: Takeo Matsuki, Yasuo Nara, Takahisa Eimori, Toshinari Watanabe, Nobuyuki Mise, Tetsu Morooka

Publikováno v: Japanese Journal of Applied Physics. 47:2375-2378

Three SiN offset spacers were compared regarding the suppression of the gate-edge metamorphoses (GEMs) of scaled TaSiN/HfSiON n-type metal–oxide–semicondutor field-effect-transistors. The offset-spacer-induced GEM appears only in short-channel de

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5de27afd099247b7ca21e3e05e8e8313
https://doi.org/10.1143/jjap.47.2375

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Suppression of anomalous threshold voltage increase with area scaling for Mg- or La-incorporated high-k/Metal gate nMISFETs in deeply scaled region

Autor: Toshihide Nabatame, J. Yugami, Toyohiro Chikyow, Kazuto Ikeda, Takeo Matsuki, Kizuku Yamada, Seiichi Miyazaki, Kenji Shiraishi, Tetsu Morooka, Motoyuki Sato, Akira Uedono, T. Suzuki, Yuzuru Ohji, Kenji Ohmori

Publikováno v: 2010 Symposium on VLSI Technology.

Anomalous threshold voltage increase with area scaling of Mg- or La-incorporated high-k gate dielectrics has great impact on scaled devices. This paper reveals that much amount of Mg or La capping effects for V t reduction was disappeared with the in

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::aa4cab12d9d41332692fc9e6e385b954
https://doi.org/10.1109/vlsit.2010.5556129

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Negatively charged deep level defects generated by Yttrium and Lanthanum incorporation into HfO2 for Vth adjustment, and the impact on TDDB, PBTI and 1/f noise

Autor: Yuzuru Ohji, Takayuki Suzuki, Keisaku Yamada, Kenji Ohmori, Motoyuki Sato, J. Yugami, Yoshihiro Sugita, Kenji Shiraishi, Kazuto Ikeda, Tetsu Morooka, Takeo Matsuki, Kikuo Yamabe, Satoshi Kamiyama

Publikováno v: 2009 IEEE International Electron Devices Meeting (IEDM).

We studied the impact of Yttrium and Lanthanum incorporation into HfO 2 on reliability (TDDB, PBTI and 1/f noise). They introduce smaller Weibull β values and early failure in TDDB, with negative shift in PBTI. They are caused by the negatively char

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c0685e6c32e2536e65f34a65f2ae9b73
https://doi.org/10.1109/iedm.2009.5424407

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Impact of additional factors in threshold voltage variability of metal/high-k gate stacks and its reduction by controlling crystalline structure and grain size in the metal gates

Autor: Yoshihiro Sugita, D. Ishikawa, Kenji Shiraishi, Yasuo Nara, Kizuku Yamada, Tetsu Morooka, Toyohiro Chikyow, Kenji Ohmori, Takeo Matsuki, T. Aminaka

Publikováno v: 2008 IEEE International Electron Devices Meeting.

We have clarified that, in a metal/high-k gate stack, as well as the variability introduced by random dopant fluctuations (RDF), the threshold voltage variability (TVV) is attributable to the crystal structure and grain size in the metal gate. We hav

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::eeb1451dad4eb2bc41924dac302529eb
https://doi.org/10.1109/iedm.2008.4796707

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Physical model of the PBTI and TDDB of la incorporated HfSiON gate dielectrics with pre-existing and stress-induced defects

Autor: Yasuo Nara, Toshihide Nabatame, T. Aoyama, T. Eimori, Shinya Sugino, Hiroaki Arimura, M. Nakamura, Kizuku Yamada, Motoyuki Sato, Kenji Shiraishi, Nobuyuki Mise, S. Kamiyama, Tetsu Morooka, Yuzuru Ohji, Heiji Watanabe, A. Tachibana, Kikuo Yamabe, J. Shimokawa, Naoto Umezawa

Publikováno v: 2008 IEEE International Electron Devices Meeting.

We have clarified the impact on reliability of La incorporation into the HfSiON gate dielectrics nMOSFETs (PBTI, TDDB). Although La incorporation is effective for pre-existing defect suppression, stress induced defect generation is more sensitive to

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4ac7b115dc1aa6db4ae78666d0116d84
https://doi.org/10.1109/iedm.2008.4796629

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Single Metal/Dual High-k Gate Stack with Low Vth and Precise Gate Profile Control for Highly Manufacturable Aggressively Scaled CMISFETs

Autor: Yasuo Nara, T. Ono, T. Eimori, Motoyuki Sato, K. Murayama, Nobuyuki Mise, Yuzuru Ohji, S. Kamiyama, Tetsu Morooka

Publikováno v: 2007 IEEE International Electron Devices Meeting.

We have proposed a single metal/dual high-k (SMDH), low-Vth gate stack for aggressively scaled CMISFETs. The Vth is controlled by MgO- and Al2O3-containing high-k for n and pMISFETs, respectively. The gate profile can be more easily controlled by tak

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8b3a54b26ce84448e5ef1d5f215205c1
https://doi.org/10.1109/iedm.2007.4418991

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Study of a Negative Threshold Voltage Shift in Positive Bias Temperature Instability and a Positive Threshold Voltage Shift the Negative Bias Temperature Instability of Yttrium-Doped HfO2 Gate Dielectrics

Autor: Jiro Yugami, Kazuto Ikeda, Tetsu Morooka, Motoyuki Sato, Yuzuru Ohji, Dai Ishikawa, Takeo Matsuki, Tetsuro Ono, Satoshi Kamiyama

Publikováno v: Japanese Journal of Applied Physics. 49:04DC24

We have studied unusual V th shifts in the positive bias temperature instability (PBTI) and negative bias temperature instability (NBTI) of yttrium-doped HfO2 gate dielectrics. Both positive and negative stress conditions introduce shifts in opposite

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d194790e0c8a7b2b0a19372bf403410a
https://doi.org/10.1143/jjap.49.04dc24

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