Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Tetrode transistor"'
Publikováno v:
IEEE Transactions on Electron Devices. 55:1276-1285
This paper presents a detailed investigation of the key device-level factors that contribute to the bias-dependent features observed in common-base (CB) dc instability characteristics of advanced SiGe HBTs. Parameters that are relevant to CB avalanch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::112b02b156ab44266673994bbbbbcc09
https://doi.org/10.1109/ted.2008.920235
https://doi.org/10.1109/ted.2008.920235
Autor:
L. G. Schimpf, J. G. Linvill
Publikováno v:
Bell System Technical Journal. 35:813-840
The design of tetrode transistor amplifiers encounters problems of the type that occurs with other transistor uses. Desired frequency characteristics, limitations of parasitic elements, and other practical considerations impose constraints on the ran
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::442ebc840473c8f4181362fbd3a66e86
https://doi.org/10.1002/j.1538-7305.1956.tb03804.x
https://doi.org/10.1002/j.1538-7305.1956.tb03804.x
Autor:
E.S. Yang
Publikováno v:
IEEE Journal of Solid-State Circuits. 4:84-86
An amplitude modulator using a field-effect tetrode transistor (FETT) is investigated. The operation of the modulation circuit is based on the `linear mode' where the transconductance from one gate to the drain is a linear function of the bias signal
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e1231e32e4766cbf2f4f8a239318d28
https://doi.org/10.1109/jssc.1969.1049965
https://doi.org/10.1109/jssc.1969.1049965
Publikováno v:
Nuclear Instruments and Methods. 60:343-345
Characteristics and performance as a γ-ray spectrometer of a large volume (85 cm 3 ) two open-ended coaxial Ge(Li) diode are described. By using a low noise field effect tetrode transistor pre-amplifier a resolution value of 4.3 keV has been achieve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b805989cb37462417fbb2b57d6f4950e
https://doi.org/10.1016/0029-554x(68)90148-1
https://doi.org/10.1016/0029-554x(68)90148-1
Publikováno v:
ESSCIRC 76: 2nd European Solid State Circuits Conference.
This paper presents a project on an electrically reprogrammable memory system in which the control of the avalanche degradation of the H FE of bipolar tetrode transistor is executed by the gate voltage. The design of a type REPROM with 1024 bits capa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2fbfea846de63e5d2afd013c006dd1c7
https://doi.org/10.1109/esscirc.1976.5469100
https://doi.org/10.1109/esscirc.1976.5469100
Publikováno v:
Transactions of the IRE Professional Group on Electron Devices. :7-7
The tetrode transistor consists of a base pellet, a point contact collector electrode, and two emitter point contacts. Electrical characteristics indicate that the two emitters can be made to operate nearly independently, and in many of the circuit a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::205a832ddc4e42e1ca31e915b59b4981
https://doi.org/10.1109/t-ed.1954.13950
https://doi.org/10.1109/t-ed.1954.13950