Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Tetiana Obukhova"'
Autor:
Viktoriia Koval, Tetiana Obukhova
Publikováno v:
Semiconductor Physics, Quantum Electronics and Optoelectronics. 25:58-67
In this work, the influence of the technological process for metal-assisted chemical etching on surface morphology and electrophysical properties of obtained nanostructures has been investigated. It has been demonstrated that the obtained structures
Autor:
Bohdan Soloshchuk, Mykhailo Dusheiko, Dmytro Mazulenko, Davidenko Stanislav, Dmytro Volynskyi, Amr Shams, Tetiana Obukhova
Publikováno v:
2021 IEEE 11th International Conference Nanomaterials: Applications & Properties (NAP).
Melanin-silicon structures are promising organic-inorganic materials that combine the benefits of biopolymer and conventional semiconductors. In diode-like mode, the rectification factor is up to 500 and depends on melanin deposition time. Melanin-si
Publikováno v:
Microsystems, Electronics and Acoustics. 22:6-11
In the paper thin film porous silicon layers on insulator substrates were investigated. Silicon thin film (200-300 nm) was formed by ion-beam and sputter deposition on sapphire and polycorrundum. Than porous silicon was formed by chemical etching in
Publikováno v:
2019 IEEE 39th International Conference on Electronics and Nanotechnology (ELNANO).
In the paper, the possibility of volatile organic compounds detection by simple crystalline silicon – porous silicon structures obtained by metal-assisted chemical etching is studied. Obtained sensors demonstrate sensibility up to 5.8 A•cm3/g. It