Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Teruhito Matsui"'
Publikováno v:
The Journal of Japan Institute for Interconnecting and Packaging Electronic Circuits. 10:96-100
高密度実装基板の無洗浄化では, フラックスが残存するためイオンマイグレーションによる絶縁信頼性の低下が懸念される。そこで, フラックスに含まれる活性剤に着目し, 銅イオンとし
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69cc1114d44ebcd9e467c18f1ac2f48d
https://doi.org/10.5104/jiep1995.10.96
https://doi.org/10.5104/jiep1995.10.96
Publikováno v:
Journal of SHM. 10:34-38
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e109b6da42a6c6e07e17962c0965fe40
https://doi.org/10.5104/jiep1993.10.3_34
https://doi.org/10.5104/jiep1993.10.3_34
Publikováno v:
MRS Proceedings. 209
The degradation mechanism of a-SiN:H films under current injection is investigated. It is shown that the degradation of a-SiN:H films is closely related to the hole trapping into Si-Si, Si-H, and Si0 defects. It is presumably concluded that the hole
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e52e812d9a562d715b88a8ee325e1659
https://doi.org/10.1557/proc-209-487
https://doi.org/10.1557/proc-209-487
Publikováno v:
Applied Physics Letters. 56:1641-1642
A 1.5 μm GaInAsP/InP buried‐heterostructure laser diode was fabricated by reactive ion etching using a mixture of ethane and hydrogen for the formation of mesa stripe. Blocking layers were regrown on the dry etched wafers by liquid phase epitaxy.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::939f81f9931f1d701a0f4388f02e7260
https://doi.org/10.1063/1.103151
https://doi.org/10.1063/1.103151
Publikováno v:
Japanese Journal of Applied Physics. 32:4430
InP crystals were etched by reactive ion etching (RIE) with ethane and hydrogen (C2H6/H2). Etched crystals and gas species were characterized by photoluminescence and mass spectroscopic measurements. Evaporation of phosphorus is induced by hydrogen,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::33d0baf03e1a97fd4a1f792bcc6a3a44
https://doi.org/10.1143/jjap.32.4430
https://doi.org/10.1143/jjap.32.4430
Publikováno v:
Japanese Journal of Applied Physics. 29:L213
An open-tube Zn diffusion method using solid sources of Zn3P2 and InP has been developed and applied to the fabrication of InGaAsP/InP heterojunction bipolar transistors (HBTs). The diffusion depth was accurately controlled by the diffusion time. A s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4395ba435f766e3dd6c59543aacf5065
https://doi.org/10.1143/jjap.29.l213
https://doi.org/10.1143/jjap.29.l213
Publikováno v:
Electronics Letters. 26:392
A maximum DC current gain of 112000 was obtained by a double-layer base HBT with a thin base layer of 0.1 μm thickness. A breakdown voltage with a common-emmitter configuration was found to be 1.3 V, which is smaller than for conventional HBTs owing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e1f528ebd181800a92fd5bdfc90fea4
https://doi.org/10.1049/el:19900256
https://doi.org/10.1049/el:19900256
Autor:
Kyozo Kanamoto, Noriaki Tsukada, Yuji Abe, Yasunori Tokuda, Takashi Nakayama, Teruhito Matsui
Publikováno v:
Journal of Applied Physics. 64:1022-1026
Emission spectra of a tandem‐type GaAs single quantum well laser diode were investigated under pulsed operating conditions. By controlling the two injection current levels, we could force the device to operate not only at the lowest (n=1) quantized
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35bc8e886523e96d155ec9fdc55b680f
https://doi.org/10.1063/1.341911
https://doi.org/10.1063/1.341911
Publikováno v:
SHINKU. 32:801-807
Mixtures of ethane and hydrogen are used as etching gas in order to etch InP, InGaAs and GaAs in reactive ion etching. Smooth surfaces and excellent vertical sidewalls have been obtained by choosing the optimum etching parameters. Etch rates obtained
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da6e95f1bc3ff459440b98930334e8d7
https://doi.org/10.3131/jvsj.32.801
https://doi.org/10.3131/jvsj.32.801
Autor:
Toshiyuki Ohishi, Yuji Abe, Kenichi Ohtsuka, Hitoshi Ogata, Hiroshi Sugimoto, Teruhito Matsui
Publikováno v:
Journal of Crystal Growth. 89:391-394
High-purity InGaAs epitaxial layers with an area of 15 × 30 mm 2 were grown by using a conventional leak-tight liquid phase epitaxial growth system without any special treatments. A room temperature electron mobility as high as 12000 cm 2 V -1 s -1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6391daafe996bfbdc4478a4ddae16f95
https://doi.org/10.1016/0022-0248(88)90198-4
https://doi.org/10.1016/0022-0248(88)90198-4