Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Terry Torng"'
Autor:
Guenole Jan, Vinh Lam, Terry Torng, Y. Lee, Renren He, T. Zhong, A. Wang, Po-Kang Wang, Luc Thomas, J. Teng, Huanlong Liu, Ru-Ying Tong, Son Thai Le, Shen Dongna, Santiago Serrano-Guisan, Jian Zhu, Jesmin Haq
Publikováno v:
2017 IEEE International Magnetics Conference (INTERMAG).
Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) is a leading candidate for embedded memory applications, with promises of low power, high performance, and non-volatility.
Autor:
Huanlong Liu, Ru-Ying Tong, Sundar Vignesh, Terry Torng, Vinh Lam, Jesmin Haq, Shen Dongna, Mohammed Benzaouia, Jodi Iwata-Harms, P. Liu, Renren He, A. Wang, Y. Yang, Po-Kang Wang, Guenole Jan, Y. Lee, Jian Zhu, T. Zhong, J. Teng, Luc Thomas, Son Thai Le, Sahil Patel, Santiago Serrano-Guisan
Publikováno v:
2017 IEEE International Magnetics Conference (INTERMAG).
Spin Transfer Torque Magnetic Random Access Memories (STT-MRAM) are based on Magnetic Tunnel Junctions (MTJs) made out of two ferromagnetic electrodes separated by a MgO tunnel barrier.
Autor:
Guenole Jan, Jesmin Haq, Luc Thomas, Son Thai Le, T. Zhong, Vinh Lam, Ru-Ying Tong, A. Wang, Po-Kang Wang, Huanlong Liu, Santiago Serrano-Guisan, Sundar Vignesh, Sahil Patel, P. Liu, Renren He, Jodi Iwata-Harms, Y. Lee, Y. Yang, J. Teng, Shen Dongna, Terry Torng, Jian Zhu
Publikováno v:
2017 IEEE International Magnetics Conference (INTERMAG).
Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) is the leading technology for next generation non-volatile embedded memories [1].
Autor:
Luc Thomas, Harry Chuang, Yuan-Jen Lee, Tom Zhong, Derek Lin, Po-Kang Wang, Yung-Huei Lee, Kuei-Hung Shen, Huanlong Liu, Terry Torng, Yu-Jen Wang, Jian Zhu, Chiang Tien-Wei, Meng-Chun Shih, Chia-Yu Wang, William J. Gallagher, Guenole Jan, Wayne Wang
Publikováno v:
2016 IEEE Symposium on VLSI Technology.
A comprehensive reliability analysis of perpendicular Spin-Transfer-Torque Magnetic Random Access Memory (pSTT-MRAM) is demonstrated that pSTT-MRAM is capable of fast write, more than 107 cycles endurance, less than 10−20 read disturb error rate at
Autor:
Vinh Lam, Jeffrey Teng, Son T. Le, Jodi Iwata-Harms, Santiago Serrano-Guisan, Guenole Jan, Yu-Jen Wang, Jian Zhu, Yuan-Jen Lee, Shen Dongna, Huanlong Liu, Luc Thomas, Sahil Patel, Ru-Ying Tong, Jesmin Haq, Po-Kang Wang, Renren He, Terry Torng, Rao Annapragada, Tom Zhong
Publikováno v:
2016 IEEE Symposium on VLSI Technology.
We present recent advances in writing speed of pSTT_MRAM which demonstrate its potential as a candidate for replacement of LCC cache for advanced technology nodes as well as applications where non-volatility may be needed. In this paper we explore th
Autor:
Guenole Jan, Luc Thomas, Ru-Ying Tong, Terry Torng, Jesmin Haq, Tom Zhong, Shen Dongna, Son T. Le, Rao Annapragada, Teng Zhongjian, Renren He, Po-Kang Wang, K. Pi, Santiago Serrano-Guisan, Yu-Jen Wang, Jian Zhu, Huanlong Liu, Vinh Lam, Yuan-Jen Lee
Publikováno v:
2015 IEEE International Electron Devices Meeting (IEDM).
Current understanding of thermal stability of perpendicular STT-MRAM based on device-level data suggests that the thermal stability factor A is almost independent of device diameter above ∼30nm. Here we report that contrary to this conventional wis
Autor:
Witold Kula, Terry Torng, Thomas M. Maffitt, Qiang Chen, Jonathan Z. Sun, Ruth Tong, Denny D. Tang, John K. DeBrosse, Robert Beach, Tai Min, Daniel C. Worledge, Cheng Tzong Horng, Mao-Min Chen, Po-Kang Wang, Guenole Jan, Tom Zhong, William J. Gallagher
Publikováno v:
IEEE Transactions on Magnetics. 46:2322-2327
Key design parameters of 64 Mb STT-MRAM at 90-nm technology node are discussed. A design point was developed with adequate TMR for fast read operation, enough energy barrier for data retention and against read disturbs, a write voltage satisfying the
Autor:
Vinh Lam, Tom Zhong, Son T. Le, Luc Thomas, Yu-Jen Wang, Jian Zhu, Ru-Ying Tong, Terry Torng, Jesmin Haq, Shen Dongna, K. Pi, Po-Kang Wang, Yuan-Jen Lee, Renren He, Jeffrey Teng, Guenole Jan, Huanlong Liu, Rao Annapragada
Publikováno v:
2015 Symposium on VLSI Technology (VLSI Technology).
STT-MRAM technology has been attracting renewed attention since the embedability of a working STT-MRAM design has been demonstrated [1]. In this paper we expand on the versatility of STT-MRAM by demonstrating the conversion of a standard STT-MRAM cel
Autor:
Luc Thomas, Jesmin Haq, Shen Dongna, Terry Torng, Y. Lee, Renren He, Wang Yu-Jen, Ru-Ying Tong, J. Teng, T. Zhong, Huanlong Liu, Son Thai Le, Guenole Jan, K. Pi, Po-Kang Wang, Jian Zhu, Vinh Lam
Publikováno v:
2015 IEEE Magnetics Conference (INTERMAG).
The recent rise of mobile applications such as Internet of Things (IoT), wearable electronics, and context aware computing has renewed the search for a universal embedded memory technology [1]. Such a technology should combine fast read/write, low vo
Autor:
Jesmin Haq, Vinh Lam, Shen Dongna, Po-Kang Wang, Guenole Jan, Luc Thomas, K. Pi, Huanlong Liu, Kenlin Huang, Ru-Ying Tong, Terry Torng, Jeffrey Teng, Le Son, Renren He, Yu-Jen Wang, Jian Zhu, Yuan-Jen Lee, Tom Zhong
Publikováno v:
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical Papers.
We present major breakthroughs in MTJ design for STT-MRAM applications allowing reliable write for pulse lengths down to 1.5ns, data retention up to 125°C for 10 years and full compatibility with BEOL process up to 400°C for 1 hour. We have success