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pro vyhledávání: '"Terry G Golding"'
Autor:
Uthayasankaran Peralagu, Ian M. Povey, Yen-Chun Fu, Paul K. Hurley, David Millar, Iain G. Thayne, Olesya Ignatova, Khalid Hossain, Xu Li, Matthew J. Steer, Terry G Golding, Manish Jain, Ravi Droopad
Publikováno v:
ECS Transactions. 69:15-36
In an era of power-constrained transistor scaling, III-V semiconductors, with high electron velocities, appear promising as the n-channel solution in post-Si CMOS technologies [1]. To make this a reality, substantial undertaking has gone into finding
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b4dc496745198c39ea3f93c9455232a3
https://doi.org/10.1149/06905.0015ecst
https://doi.org/10.1149/06905.0015ecst
