Zobrazeno 1 - 10
of 1 653
pro vyhledávání: '"Terrones, M"'
Autor:
Jimenez, V. O., Pham, Y. T. H., Zhou, D., Liu, M. Z., Nugera, F. A., Kalappattil, V., Eggers, T., Hoang, K., Duong, D. L., Terrones, M., Gutierrez, H. R., Phan, M. H.
The capacity to manipulate magnetization in two-dimensional dilute magnetic semiconductors (2D-DMSs) using light, specifically in magnetically doped transition metal dichalcogenide (TMD) monolayers (M-doped TX2, where M = V, Fe, Cr; T = W, Mo; X = S,
Externí odkaz:
http://arxiv.org/abs/2305.01026
Publikováno v:
Economía. 5(9):107-143
El artículo no tiene resumen.
Autor:
Terrones, M., Calderón, César
Publikováno v:
Economía. 16(31):23-69
Se evalúa en este artículo la influencia del nivel de educación formal de la población sobre el crecimiento económico, para el caso de los países de América Latina. El interés de tal evaluación radica en que estos países -que tienen cierta
Autor:
Banerjee, R., Nguyen, V. -H., Granzier-Nakajima, T., Pabbi, L., Lherbier, A., Binion, A. R., Charlier, J. -C., Terrones, M., Hudson, E. W.
Strain engineering of graphene takes advantage of one of the most dramatic responses of Dirac electrons enabling their manipulation via strain-induced pseudo-magnetic fields. Numerous theoretically proposed devices, such as resonant cavities and vall
Externí odkaz:
http://arxiv.org/abs/1903.10468
Understanding the active sites of boron nitride for CWPO: An experimental and computational approach
Autor:
Quintanilla, A., Vega, G., Carbajo, J., Casas, J.A., Lei, Y., Fujisawa, K., Liu, H., Cruz-Silva, R., Terrones, M., Miranzo, P., Osendi, M.I., Belmonte, M., Fernández Sanz, J.
Publikováno v:
In Chemical Engineering Journal 15 February 2021 406
Autor:
Pradhan, N. R., Rhodes, D., Memaran, S., Poumirol, J. M., Smirnov, D., Talapatra, S., Feng, S., Perea-Lopez, N., Elias, A. L., Terrones, M., Ajayan, P. M., Balicas, L.
Publikováno v:
Sci. Rep. 5, 8979 (2015)
Here, we present a temperature ($T$) dependent comparison between field-effect and Hall mobilities in field-effect transistors based on few-layered WSe$_2$ exfoliated onto SiO$_2$. Without dielectric engineering and beyond a $T$-dependent threshold g
Externí odkaz:
http://arxiv.org/abs/1502.00335
Autor:
Pradhan, N. R., Rhodes, D., Zhang, Q., Talapatra, S., Terrones, M., Ajayan, P. M., Balicas, L.
Publikováno v:
Appl. Phys. Lett. 102, 123105 (2013)
By fabricating and characterizing multi-layered MoS$_2$-based field-effect transistors (FETs) in a four terminal configuration, we demonstrate that the two terminal-configurations tend to underestimate the carrier mobility $\mu$ due to the Schottky b
Externí odkaz:
http://arxiv.org/abs/1301.2813
Autor:
Choi, Y. -M, Lee, D. -S., Czerw, R., Chiu, P. -W., Grobert, N., Terrones, M., Reyes-Reyes, M., Terrones, H., Charlier, J. -C., Ajayan, P. M., Roth, S., Carroll, D. L., Park, Y. -W.
The temperature dependent thermoelectric power (TEP) of boron and nitrogen doped multi-walled carbon nanotube mats has been measured showing that such dopants can be used to modify the majority conduction from p-type to n-type. The TEP of boron doped
Externí odkaz:
http://arxiv.org/abs/cond-mat/0204249
Autor:
Czerw, R., Terrones, M., Charlier, J. -C., Blase, X., Foley, B., Kamalakaran, R., Grobert, N., Terrones, H., Ajayan, P. M., Blau, W., Tekleab, D., Ruhle, M., Carroll, D. L.
Nitrogen doped carbon nanotubes have been synthesized using pyrolysis and characterized by Scanning Tunneling Spectroscopy and transmission electron microscopy. The doped nanotubes are all metallic and exhibit strong electron donor states near the Fe
Externí odkaz:
http://arxiv.org/abs/cond-mat/0011318
Publikováno v:
Philosophical Transactions: Mathematical, Physical and Engineering Sciences, 1996 Sep . 354(1715), 2025-2054.
Externí odkaz:
https://www.jstor.org/stable/54578