Zobrazeno 1 - 10
of 438
pro vyhledávání: '"Terrones, Humberto"'
Autor:
Zhou, Da, Pham, Yen Thi Hai, Dang, Diem Thi-Xuan, Sanchez, David, Oberoi, Aaryan, Wang, Ke, Fest, Andres, Sredenschek, Alexander, Liu, Mingzu, Terrones, Humberto, Das, Saptarshi, Le, Dai-Nam, Woods, Lilia M., Phan, Manh-Huong, Terrones, Mauricio
Monolayers of molybdenum disulfide (MoS2) are the most studied two-dimensional (2D) transition-metal dichalcogenides (TMDs), due to its exceptional optical, electronic, and opto-electronic properties. Recent studies have shown the possibility of inco
Externí odkaz:
http://arxiv.org/abs/2401.16806
Autor:
Ghafariasl, Mahdi, Zhang, Tianyi, Ward, Zachary D., Zhou, Da, Sanchez, David, Swaminathan, Venkataraman, Terrones, Humberto, Terrones, Mauricio, Abate, Yohannes
Engineering the electronic bandgap is of utmost importance in diverse domains ranging from information processing and communication technology to sensing and renewable energy applications. Transition metal dichalcogenides (TMDCs) provide an ideal pla
Externí odkaz:
http://arxiv.org/abs/2308.14990
Autor:
Lei, Yu, Avvaru, Venkata Sai, Ward, Zachary, Liu, He, Fujisawa, Kazunori, Bepete, George, Zhang, Na, Carreno, Andres Fest, Terrones, Humberto, Etacheri, Vinodkumar, Terrones, Mauricio
Publikováno v:
In Chemical Engineering Journal 15 October 2024 498
Autor:
Song, Bumsub, Yun, Seok Joon, Jiang, Jinbao, Beach, Kory, Choi, Wooseon, Kim, Young-Min, Terrones, Humberto, Song, Young Jae, Duong, Dinh Loc, Lee, Young Hee
Publikováno v:
Phys. Rev. B 103, 094432 (2021)
One primary concern in diluted magnetic semiconductors (DMSs) is how to establish a long-range magnetic order with a low magnetic doping concentration to maintain the gate tunability of the host semiconductor, as well as to increase Curie temperature
Externí odkaz:
http://arxiv.org/abs/2002.07333
Autor:
Meng, Yuze, Wang, Tianmeng, Li, Zhipeng, Qin, Ying, Lian, Zhen, Chen, Yanwen, Lucking, Michael C., Beach, Kory, Taniguchi, Takashi, Watanabe, Kenji, Tongay, Sefaattin, Song, Fengqi, Terrones, Humberto, Shi, Su-Fei
Monolayer transition metal dichalcogenides (TMDs) possess superior optical properties, including the valley degree of freedom that can be accessed through the excitation light of certain helicity. While WS2 and WSe2 are known for their excellent vall
Externí odkaz:
http://arxiv.org/abs/1812.06758
Autor:
Pradhan, Nihar R., Garcia, Carlos, Isenberg, Bridget, Rhodes, Daniel, Feng, Simin, Memaran, Shahriar, Xin, Yan, McCreary, Amber, Walker, Angela R. Hight, Raeliarijaona, Aldo, Terrones, Humberto, Terrones, Mauricio, McGill, Stephen, Balicas, Luis
Publikováno v:
Scientific Reports (2018)
We fabricated ambipolar field-effect transistors (FETs) from multi-layered triclinic ReSe2, mechanically exfoliated onto a SiO2 layer grown on p-doped Si. In contrast to previous reports on thin layers (~2 to 3 layers), we extract field-effect carrie
Externí odkaz:
http://arxiv.org/abs/1808.03621
In order to shed light on the second harmonic generation (SHG) of new 2-D systems, first principles methods are used to calculate the second order susceptibility \chi(2) for different types of layered alloys such as monolayers of transition metal dic
Externí odkaz:
http://arxiv.org/abs/1711.06751
Publikováno v:
Rep. Prog. Phys. 80 096501 (2017)
This review presents the state of the art in strain and ripple-induced effects on the electronic and optical properties of graphene. It starts by providing the crystallographic description of mechanical deformations, as well as the diffraction patter
Externí odkaz:
http://arxiv.org/abs/1611.08627
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Pradhan, Nihar R., McCreary, Amber, Rhodes, Daniel, Lu, Zhengguang, Feng, Simin, Manousakis, Efstratios, Smirnov, Dmitry, Namburu, Raju, Dubey, Madan, Walker, Angela R. Hight, Terrones, Humberto, Terrones, Mauricio, Dobrosavljevic, Vladimir, Balicas, Luis
Publikováno v:
Nano Lett. 15 , 8377 (2015)
In ReS$_2$ a layer-independent direct band-gap of 1.5 eV implies a potential for its use in optoelectronic applications. ReS$_2$ crystallizes in the 1T$^{\prime}$-structure which leads to anisotropic physical properties and whose concomitant electron
Externí odkaz:
http://arxiv.org/abs/1510.02128