Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Terrance P O’Regan"'
The capacitance-voltage (C-V) characteristic is calculated for p-type In0.53Ga0.47As metal-oxide-semiconductor (MOS) structures based on a self-consistent Poisson-Schroumldinger solution. For strong inversion, charge quantization leads to occupation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8947a7c2db58d31e6d1b51970bb961a2
https://hdl.handle.net/10468/4341
https://hdl.handle.net/10468/4341
Autor:
Matthew L. Chin, Prakash Periasamy, Terrance P. O'Regan, Matin Amani, Cheng Tan, Ryan P. O'Hayre, Joseph J. Berry, Richard M. Osgood, Philip A. Parilla, David S. Ginley, Madan Dubey
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 31:051204
The authors report the performance of various planar metal–insulator–metal (MIM) tunneling diodes, which are being investigated for use in rectenna devices for energy harvesting applications. Six cathode materials (M2): Nb, Ag, Cu, Ni, Au, and Pt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aed7ee356438644f55d00f94dbdb97ab
https://doi.org/10.1116/1.4818313
https://doi.org/10.1116/1.4818313
Publikováno v:
Journal of Applied Physics. 108:123713
We present a comprehensive investigation of the low-field hole mobility in strained Ge and III-V (GaAs, GaSb, InSb, and In(1-x)Ga(x)As) p-channel inversion layers with both SiO(2) and high-kappa insulators. The valence (sub) band structure of Ge and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2f480a9537b5747bf1397a9b078c565b
https://doi.org/10.1063/1.3524569
https://doi.org/10.1063/1.3524569
Autor:
Dmitry Ruzmetov, Mahesh R Neupane, Andrew Herzing, Terrance P O’Regan, Alex Mazzoni, Matthew L Chin, Robert A Burke, Frank J Crowne, A Glen Birdwell, DeCarlos E Taylor, Andrei Kolmakov, Kehao Zhang, Joshua A Robinson, Albert V Davydov, Tony G Ivanov
Publikováno v:
2D Materials; Oct2018, Vol. 5 Issue 4, p1-1, 1p