Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Terrance P O’Regan"'
The capacitance-voltage (C-V) characteristic is calculated for p-type In0.53Ga0.47As metal-oxide-semiconductor (MOS) structures based on a self-consistent Poisson-Schroumldinger solution. For strong inversion, charge quantization leads to occupation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8947a7c2db58d31e6d1b51970bb961a2
https://hdl.handle.net/10468/4341
https://hdl.handle.net/10468/4341
Autor:
Matthew L. Chin, Prakash Periasamy, Terrance P. O'Regan, Matin Amani, Cheng Tan, Ryan P. O'Hayre, Joseph J. Berry, Richard M. Osgood, Philip A. Parilla, David S. Ginley, Madan Dubey
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 31:051204
The authors report the performance of various planar metal–insulator–metal (MIM) tunneling diodes, which are being investigated for use in rectenna devices for energy harvesting applications. Six cathode materials (M2): Nb, Ag, Cu, Ni, Au, and Pt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aed7ee356438644f55d00f94dbdb97ab
https://doi.org/10.1116/1.4818313
https://doi.org/10.1116/1.4818313
Publikováno v:
Journal of Applied Physics. 108:123713
We present a comprehensive investigation of the low-field hole mobility in strained Ge and III-V (GaAs, GaSb, InSb, and In(1-x)Ga(x)As) p-channel inversion layers with both SiO(2) and high-kappa insulators. The valence (sub) band structure of Ge and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2f480a9537b5747bf1397a9b078c565b
https://doi.org/10.1063/1.3524569
https://doi.org/10.1063/1.3524569
Autor:
Dmitry Ruzmetov, Mahesh R Neupane, Andrew Herzing, Terrance P O’Regan, Alex Mazzoni, Matthew L Chin, Robert A Burke, Frank J Crowne, A Glen Birdwell, DeCarlos E Taylor, Andrei Kolmakov, Kehao Zhang, Joshua A Robinson, Albert V Davydov, Tony G Ivanov
Publikováno v:
2D Materials; Oct2018, Vol. 5 Issue 4, p1-1, 1p
Publikováno v:
Journal of Applied Physics; 6/28/2015, Vol. 117 Issue 24, p244303-1-244303-9, 9p, 5 Diagrams, 4 Charts, 4 Graphs
Autor:
Dong, Liang1, Namburu, Raju2, O'Regan, Terrance3, Dubey, Madan3, Dongare, Avinash1 dongare@uconn.edu
Publikováno v:
Journal of Materials Science. Oct2014, Vol. 49 Issue 19, p6762-6771. 10p. 2 Diagrams, 2 Charts, 7 Graphs.
Autor:
Jun Lin, Walsh, Lee, Hughes, Greg, Woicik, Joseph C., Povey, Ian M., O'Regan, Terrance P., Hurley, Paul K.
Publikováno v:
Journal of Applied Physics; 2014, Vol. 116 Issue 2, p024104-1-024104-8, 8p, 1 Black and White Photograph, 1 Chart, 4 Graphs
Autor:
O'Regan, Terrance P., Ruzmetov, Dmitry, Neupane, Mahesh R., Burke, Robert A., Herzing, Andrew A., Kehao Zhang, Birdwell, A. Glen, Taylor, DeCarlos E., Byrd, Edward F. C., Walck, Scott D., Davydov, Albert V., Robinson, Joshua A., Ivanov, Tony G.
Publikováno v:
Applied Physics Letters; 7/26/2017, Vol. 111 Issue 5, p1-5, 5p
Publikováno v:
Applied Physics Letters; 2/3/2014, Vol. 104 Issue 5, p053107-1-053107-5, 5p, 2 Charts, 4 Graphs
Autor:
Chin, Matthew L., Periasamy, Prakash, O'Regan, Terrance P., Amani, Matin, Tan, Cheng, O'Hayre, Ryan P., Berry, Joseph J., Osgood, Richard M., Parilla, Philip A., Ginley, David S., Dubey, Madan
Publikováno v:
Journal of Vacuum Science & Technology: Part B-Nanotechnology & Microelectronics; Sep2013, Vol. 31 Issue 5, p051204, 8p