Formation of hollow atoms above diamond surfaces

Autor: Briand, J.P., Benhachoum, M., Terraco, S., Achard, J., Anders, A., Hitz, D., Phaneuf, R.

Publikováno v: Briand, J.P.; Benhachoum, M.; Terraco, S.; Achard, J.; Anders, A.; Hitz, D.; et al.(2006). Formation of hollow atoms above diamond surfaces. Book of Extended Abstracts, 13th International Conference on the Physics of Highly Charged Ions. Lawrence Berkeley National Laboratory: Lawrence Berkeley National Laboratory. Retrieved from: http://www.escholarship.org/uc/item/37q0b8h1

The interaction of Highly Charged Ions (HCI) with surfaces mainly depends on the work function W of the target electrons as well as of the electric properties of the first layer(s) of the surfaces (metal, dielectrics). These two main characteristics

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od_______325::ffc84e33898752faa92da656e3ae48a1
http://www.escholarship.org/uc/item/37q0b8h1