Výsledky vyhledávání - "Terent’ev, Ya. V."

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Determination of hole g-factor in InAs/InGaAs/InAlAs quantum wells by magneto-photoluminescence studies

Autor: Terent'ev, Ya. V., Danilov, S. N., Durnev, M. V., Loher, J., Schuh, D., Bougeard, D., Ivanov, S. V., Ganichev, S. D.

Circularly-polarized magneto-photoluminescence (magneto-PL) technique has been applied to investigate Zeeman effect in InAs/InGaAs/InAlAs quantum wells (QWs) in Faraday geometry. Structures with different thickness of the QW barriers have been studie

Externí odkaz: http://arxiv.org/abs/1610.03318

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Magnetooptical Study of Zeeman Effect in Mn modulation-doped InAs/InGaAs/InAlAs Quantum Well Structures

Autor: Terent'ev, Ya. V., Danilov, S. N., Plank, H., Loher, J., Schuh, D., Bougeard, D., Weiss, D., Durnev, M. V., Tarasenko, S. A., Rozhansky, I. V., Ivanov, S. V., Yakovlev, D. R., Ganichev, S. D.

We report on a magneto-photoluminescence (PL) study of Mn modulation-doped InAs/InGaAs/InAlAs quantum wells. Two PL lines corresponding to the radiative recombination of photoelectrons with free and bound-on-Mn holes have been observed. In the presen

Externí odkaz: http://arxiv.org/abs/1502.06146

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Magneto-Photoluminescence of InAs/InGaAs/InAlAs quantum well structures

Autor: Terent'ev, Ya. V., Danilov, S. N., Loher, J., Schuh, D., Bougeard, D., Weiss, D., Durnev, M. V., Tarasenko, S. A., Mukhin, M. S., Ivanov, S. V., Ganichev, S. D.

Photoluminescence (PL) and highly circularly-polarized magneto-PL (up to 50% at 6 T) from two-step bandgap InAs/InGaAs/InAlAs quantum wells (QWs) are studied. Bright PL is observed up to room temperature, indicating a high quantum efficiency of the r

Externí odkaz: http://arxiv.org/abs/1401.7515

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Spin-polarized electric currents in diluted magnetic semiconductor heterostructures induced by terahertz and microwave radiation

Autor: Olbrich, P., Zoth, C., Lutz, P., Drexler, C., Bel'kov, V. V., Terent'ev, Ya. V., Tarasenko, S. A., Semenov, A. N., Ivanov, S. V., Yakovlev, D. R., Wojtowicz, T., Wurstbauer, U., Schuh, D., Ganichev, S. D.

We report on the study of spin-polarized electric currents in diluted magnetic semiconductor (DMS) quantum wells subjected to an in-plane external magnetic field and illuminated by microwave or terahertz radiation. The effect is studied in (Cd,Mn)Te/

Externí odkaz: http://arxiv.org/abs/1204.6163

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Diluted magnetic semiconductor heterostructure AlSb/InAs/ZnMnTe with giant Zeeman effect for two dimensional electrons in InAs

Autor: Terent'ev, Ya. V., Zoth, C., Bel'kov, V. V., Olbrich, P., Drexler, C., Lechner, V., Lutz, P., Semenov, A. N., Solov'ev, V. A., Sedova, I. V., Klimko, G. V., Komissarova, T. A., Ivanov, S. V., Ganichev, S. D.

A new approach to the growth of diluted magnetic semiconductors with two dimensional electron gas in InAs quantum well has been developed. The method is based on molecular-beam epitaxy of coherent "hybrid" AlSb/InAs/(Zn,Mn)Te heterostructures with a

Externí odkaz: http://arxiv.org/abs/1104.0854

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Spin polarized electric currents in semiconductor heterostructures induced by microwave radiation

Autor: Drexler, C., Bel'kov, V. V., Ashkinadze, B., Olbrich, P., Zoth, C., Lechner, V., Terent'ev, Ya. V., Yakovlev, D. R., Karczewski, G., Wojtowicz, T., Schuh, D., Wegscheider, W., Ganichev, S. D.

We report on microwave (mw) radiation induced electric currents in (Cd,Mn)Te/(Cd,Mg)Te and InAs/(In,Ga)As quantum wells subjected to an external in-plane magnetic field. The current generation is attributed to the spin-dependent energy relaxation of

Externí odkaz: http://arxiv.org/abs/1009.3177

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Resonant spin-dependent electron coupling in a III-V/II-VI heterovalent double quantum well

Autor: Toropov, A. A., Sedova, I. V., Sorokin, S. V., Terent'ev, Ya. V., Ivchenko, E. L., Ivanov, S. V.

We report on design, fabrication, and magnetooptical studies of a III-V/II-VI hybrid structure containing a GaAs/AlGaAs/ZnSe/ZnCdMnSe double quantum well (QW). The structure design allows one to tune the QW levels into the resonance, thus facilitatin

Externí odkaz: http://arxiv.org/abs/cond-mat/0411409

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