Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Terence W O'keeffe"'
Autor:
Anant K. Agarwal, Maurice H. Hanes, M.C. Driver, Terence W O'keeffe, J.R. Szedon, R.R. Siergiej, H.M. Hobgood, T.J. Smith, Harvey C. Nathanson, C.D. Brandt, R.N. Thomas
Publikováno v:
IEEE International SOI Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8b3834dd9230d876a786fe676afb17e
https://doi.org/10.1109/soi.1992.664833
https://doi.org/10.1109/soi.1992.664833
Autor:
H.M. Hobgood, Maurice H. Hanes, P.G. McMullin, A.K. Agarwal, J.R. Szedon, R.N. Thomas, Harvey C. Nathanson, Terence W O'keeffe, M.C. Driver, T.J. Smith
Publikováno v:
International Electron Devices Meeting 1991 [Technical Digest].
An advanced silicon technology is presented which is capable of producing highly reliable and affordable MMICs (monolithic microwave integrated circuits) integrated with high-speed CMOS digital functions as replacements for costly GaAs hybrids curren
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::453f9a4e59a430e3606df07b486541d7
https://doi.org/10.1109/iedm.1991.235329
https://doi.org/10.1109/iedm.1991.235329
Autor:
Maurice H. Hanes, R.R. Siergiej, J.R. Szedon, Harvey C. Nathanson, Terence W O'keeffe, T.J. Smith, M.C. Driver, R.N. Thomas, P.G. McMullin, H.M. Hobgood, Anant K. Agarwal
Publikováno v:
IEEE Electron Device Letters. 14:219-221
An improved silicon-on-insulator (SOI) approach offers devices and circuits operating to 10 GHz by providing formerly unattainable capabilities in bulk silicon: reduced junction-to-substrate capacitances in FETs and bipolar transistors, inherent elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a1241b1fd5f569fe25cd7917361e617d
https://doi.org/10.1109/55.215173
https://doi.org/10.1109/55.215173
Autor:
R.M. Handy, Terence W O'keeffe
Publikováno v:
Solid-State Electronics. 11:261-266
Present silicon integrated circuit fabrication technology depends upon the use of the surface oxide as a diffusion mask. Ordinarily the diffusion windows are opened by etching the oxide through holes in a photoresist mask. A new process has been deve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8f6b76d31b617a41277ee652f161decc
https://doi.org/10.1016/0038-1101(68)90087-7
https://doi.org/10.1016/0038-1101(68)90087-7
Autor:
Terence W O'keeffe
Publikováno v:
IEEE Transactions on Electron Devices. 17:465-469
ELIPS is based on the use of an electron image tube principle to project large area (5-cm diameter) ultrahigh resolution (1 micron) electron images from a patterned photocathode onto an electron-sensitive resist layer, thereby replacing the conventio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::df28a0cebfae2864e8fa87853dc8e15e
https://doi.org/10.1109/t-ed.1970.17010
https://doi.org/10.1109/t-ed.1970.17010
Publikováno v:
Solid-State Electronics. 12:841-848
An ultrahigh resolution electron image projection tube has been investigated as a means for fabricating large arrays of micron size transistors. Electrons are derived from an air stable photocathode whose surface contains an image of the desired arra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2df582ea95198f37364b0d051df9e855
https://doi.org/10.1016/0038-1101(69)90040-9
https://doi.org/10.1016/0038-1101(69)90040-9
Autor:
Terence W O'keeffe, R.M. Handy
Publikováno v:
IEEE Transactions on Electron Devices. 15:436-436
The chemical etch rate of solicon dioxide layers can be increased typically 3 to 4 times by bombardment with energetic, electrons. It was shown earlier that this phenomenon could be used to produce diffusion windows and hence to fabricate planar sili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5a8b12d5116704b16a825255683ce0c5
https://doi.org/10.1109/t-ed.1968.16353
https://doi.org/10.1109/t-ed.1968.16353