Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Terence Kane"'
Autor:
X. Zhang, J. Maniscalco, James Chingwei Li, B. Peethala, Son Nguyen, Han You, Nicholas A. Lanzillo, G. Lian, Vamsi Paruchuri, Takeshi Nogami, Hosadurga Shobha, X. Lin, Scott DeVries, Benjamin D. Briggs, Terry A. Spooner, Raghuveer R. Patlolla, Terence Kane, Daniel C. Edelstein, Huai Huang, James J. Kelly, Theodorus E. Standaert, C.-C. Yang, Jae Gon Lee, Motoyama Koichi, Prasad Bhosale, Donald F. Canaperi, S. Lian, P. McLaughlin, James J. Demarest, Devika Sil, Alfred Grill
Publikováno v:
2017 Symposium on VLSI Technology.
For beyond 7 nm node BEOL, line resistance (R) is assessed among four metallization schemes: Ru; Co; Cu with TaN/Ru barrier, and Cu with through-cobalt self-forming barrier (tCoSFB) [1]. Line-R vs. linewidth of Cu fine wires with TaN/Ru barrier cross
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4bc16a8fab7e4a2d46229b6161ce2915
https://doi.org/10.23919/vlsit.2017.7998158
https://doi.org/10.23919/vlsit.2017.7998158
Autor:
G. Hornicek, X. Zhang, Frank W. Mont, Raghuveer R. Patlolla, G. Lian, Huai Huang, Chao-Kun Hu, Terry A. Spooner, Chris Breslin, R. Long, Lynne Gignac, Shariq Siddiqui, B. Peethala, Stephan A. Cohen, Terence Kane, M. Ali, Vimal Kamineni, Y. Ostrovski, James J. Kelly, Praneet Adusumilli, J. H-C Chen, John Bruley
Publikováno v:
2017 IEEE International Interconnect Technology Conference (IITC).
Electromigration and resistivity of Cu, Co and Ru on-chip interconnection have been investigated. A similar resistivity size effect increase was observed in Cu, Co, and Ru. The effect of liners and cap, e.g. Ta, Co, Ru and SiC x N y H z , on Cu/inter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7369d0e60ca549820bc750898a391d95
https://doi.org/10.1109/iitc-amc.2017.7968977
https://doi.org/10.1109/iitc-amc.2017.7968977
Autor:
Michael P. Tenney, Terence Kane
Publikováno v:
International Symposium for Testing and Failure Analysis.
This paper explains how SEM two-point specimen current localization combined with TEM imaging/elemental mapping overcomes the limitations of conventional SEM and gallium ion beam FIB voltage contrast methods, pinpointing the location of nonlinear def
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6814892b4d0b07e2a97d3301484c3e0
https://doi.org/10.31399/asm.cp.istfa2016p0055
https://doi.org/10.31399/asm.cp.istfa2016p0055
Autor:
Vamsi Paruchuri, Juntao Li, Takeshi Nogami, Daniel C. Edelstein, Terry A. Spooner, Stephan A. Cohen, Theodorus E. Standaert, Moosung M. Chae, James J. Kelly, Terence Kane, Donald F. Canaperi, Elbert E. Huang, Benjamin D. Briggs, Raghuveer R. Patlolla, Deepika Priyadarshini, Sevim Korkmaz, Paul S. McLaughlin, Christopher Parks, Christopher J. Penny, Anita Madan, Xunyuan Zhang, Hosadurga Shobha, Wei Wang, Son Nguyen, Thomas M. Shaw
Publikováno v:
2015 IEEE International Electron Devices Meeting (IEDM).
Through-Co self-forming-barrier (tCoSFB) metallization scheme is introduced, with Cu gap-fill capability down to 7 nm-node dimensions. Mn atoms from doped-seedlayer diffuse through CVD-Co wetting layer, to form TaMn O barrier, with integrity proven b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f55e6617005625c40a3affb699b4b476
https://doi.org/10.1109/iedm.2015.7409651
https://doi.org/10.1109/iedm.2015.7409651
Autor:
Terence Kane
Publikováno v:
Proceedings of the 2015 International Conference on Microelectronic Test Structures.
14nm BEOL (back end of line) TDDB (time to dielectric defect breakdown) test site structures successfully detect reliability defects but pose significant challenges in defect analysis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f3b10da9a04f50add86f473d8291da5
https://doi.org/10.1109/icmts.2015.7106094
https://doi.org/10.1109/icmts.2015.7106094
Autor:
Yun-Yu Wang, Terence Kane
Publikováno v:
International Symposium for Testing and Failure Analysis.
For 22nm and below technologies which involve as many as fifteen back end of the line (BEOL) metallization levels, these leading edge technology nodes pose real challenges in defect localization and root cause analysis. Due to scaling, the reduction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca5c4fd5257da19b7fe05688f392a856
https://doi.org/10.31399/asm.cp.istfa2013p0033
https://doi.org/10.31399/asm.cp.istfa2013p0033
Autor:
Terence Kane
Publikováno v:
International Symposium for Testing and Failure Analysis.
A 300mm wafer atomic force prober (AFP) has been installed into IBM’s manufacturing line to enable rapid, nondestructive electrical identification of defects. Prior to this tool many of these defects could not detected until weeks or months later.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c74822fb24febb8d27f809a39d1b4efb
https://doi.org/10.31399/asm.cp.istfa2012p0071
https://doi.org/10.31399/asm.cp.istfa2012p0071
Autor:
M. Shinosky, Dan Mocuta, Brent A. Anderson, Yun-Yu Wang, F. Chen, John M. Aitken, Kai D. Feng, Steve Mittl, R. Kontra, Ann Swift, Mahender Kumar, Terence Kane, William K. Henson, Yanfeng Wang, Di-an Li, Emily R. Kinser
Publikováno v:
2012 IEEE International Reliability Physics Symposium (IRPS).
The minimum insulator spacing between the polysilicon control gate (PC) and the diffusion contacts (CA) in advanced VLSI circuits is aggressively shrinking due to continuous technology scaling. Meanwhile, rapid adoptions of new materials such as meta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c10df5d79e192414b38259b2498dd15c
https://doi.org/10.1109/irps.2012.6241865
https://doi.org/10.1109/irps.2012.6241865
Autor:
Baozhen Li, Shaoning Yao, Yun-Yu Wang, Matthew Angyal, Cathryn Christiansen, Terence Kane, Vincent J. McGahay
Publikováno v:
2012 IEEE International Reliability Physics Symposium (IRPS).
Mn doping in Cu seed has been used to improve EM performance at the 32nm technology node. This paper will show that on an optimized process with CuMn there were different degrees of EM enhancement for geometric variations including line width and ele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6f66442a87a40842ca46981b58fe91cf
https://doi.org/10.1109/irps.2012.6241856
https://doi.org/10.1109/irps.2012.6241856
Autor:
Michael P. Tenney, Terence Kane
Publikováno v:
2012 IEEE International Conference on Microelectronic Test Structures.
The introduction of nano CV characterization of discrete MOSFET devices and the method of performing scanning capacitance imaging has been previously presented.1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::23c89405cdaad011fe481cffd41b3c62
https://doi.org/10.1109/icmts.2012.6190657
https://doi.org/10.1109/icmts.2012.6190657