Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Terence J. de Lyon"'
Autor:
Scott M. Johnson, A. C. Childs, R. E. Bornfreund, W. A. Radford, D. D. Lofgreen, John E. Jensen, Gregory K. Pierce, M. D. Newton, Terence J. de Lyon, Edward P. Smith, Lee M. Ruzicka, Jeffrey J. Franklin, A. A. Buell, Jeffrey M. Peterson, M. F. Vilela, G. M. Venzor
Publikováno v:
SPIE Proceedings.
HgCdTe offers significant advantages over other semiconductors which has made it the most widely utilized variable-gap material in infrared focal plane array (FPA) technology. However, one of the main limitations of the HgCdTe materials system has be
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::43da814354fae08b322ff4b2d70023b0
https://doi.org/10.1117/12.597546
https://doi.org/10.1117/12.597546
Autor:
Andy Hutchinson, Michael D. Jack, Raymond S. Balcerak, P. E. Herning, James F. Asbrock, C. Anderson, William L. Johnson, Murray H. Kalisher, B. Walker, V. Liquori, K. Kosai, Joseph P. Rosbeck, Andrew T. Hunter, Maurice J. Halmos, Eli E. Gordon, Ward Trussel, P. Wetzel, Valerie Randall, John E. Jensen, George R. Chapman, Patrick A. Trotta, Sanghamitra Sen, Steven L. Bailey, Terence J. de Lyon
Publikováno v:
Materials for Infrared Detectors.
HgCdTe APDs and APD arrays offer unique advantages for high-performance eyesafe LADAR sensors. These include: operation at room temperature, low-excess noise, high gain, high-quantum efficiency at eyesafe wavelengths, GHz bandwidth, and high-packing
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6948b0cfdf00df07c22186cb9fb5e13e
https://doi.org/10.1117/12.448175
https://doi.org/10.1117/12.448175
Autor:
Scott M. Johnson, Terence J. de Lyon, George R. Chapman, Jeffrey M. Peterson, Michael D. Jack, Rajesh D. Rajavel, John E. Jensen, Tod S. Williamson, Valerie Randall, John A. Roth, Peter D. Brewer, W. A. Radford, Alex C. Childs, A. A. Buell, Steven L. Bailey, E. A. Patten, K. Kosai, Greg L. Olson, Eli E. Gordon, Andrew T. Hunter, Kevin D. Maranowski, L. T. Pham, J. B. Varesi, J. W. Bangs, Jerry A. Wilson
Publikováno v:
Materials for Infrared Detectors.
Since its initial synthesis and investigation more than 40 years ago, the HgCdTe alloy semiconductor system has evolved into one of the primary infrared detector materials for high-performance infrared focal-plane arrays (FPA) designed to operate in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8be7ded5e67bdb3e7f6fd181657c657
https://doi.org/10.1117/12.448189
https://doi.org/10.1117/12.448189
Autor:
K. Kosai, Greg L. Olson, Eli E. Gordon, Andrew T. Hunter, Terence J. de Lyon, Michael D. Jack, George R. Chapman, Bonnie A. Baumgratz, M. Sen, John E. Jensen, Blaine D. Johs, W.B. Johnson, Burt Walker, W. Larsen
Publikováno v:
SPIE Proceedings.
Separate absorption and multiplication avalanche photodiode (SAM-APD) device structures, operating in the 1.1 - 1.6 micrometer spectral range, have been fabricated in the HgCdTe material system by molecular-beam epitaxy. These HgCdTe device structure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::768953a548c0bd7b4a5ee07a641e197a
https://doi.org/10.1117/12.344562
https://doi.org/10.1117/12.344562
Autor:
G. M. Venzor, Owen K. Wu, Rajesh D. Rajavel, John E. Jensen, Scott M. Johnson, C. A. Cockrum, J. A. Vigil, Terence J. de Lyon
Publikováno v:
SPIE Proceedings.
Significant progress has been made in the technology for MBE growth of HgCdTe infrared focal-plane arrays on Si substrates since the initial demonstration of MBE HgCdTe-on- Si heteroepitaxy in 1989. In 1995, the first all-MBE-grown detector arrays on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ebe30f038eadebc48c0c004629fb5488
https://doi.org/10.1117/12.255165
https://doi.org/10.1117/12.255165
Autor:
Rajesh D. Rajavel, Owen K. Wu, G. M. Venzor, Scott M. Johnson, C. A. Cockrum, Terence J. de Lyon
Publikováno v:
SPIE Proceedings.
Molecular-beam epitaxy (MBE) has been utilized to deposit single crystal epitaxial films of CdTe(112)B and HgCdTe(112)B directly onto Si(112) substrates without the use of GaAs interfacial layers. The films have been characterized with x-ray diffract
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9021e098776457b0ebf434e32da8b996
https://doi.org/10.1117/12.218189
https://doi.org/10.1117/12.218189
Publikováno v:
SPIE Proceedings.
Molecular-beam epitaxy (MBE) has been utilized to deposit single crystal films of ZnTe and CdZnTe/ZnTe onto Si(100) and Si(112) substrates. Parallel epitaxy of ZnTe(100) and CdZnTe(100)/ZnTe(100) has been observed for growth on Si(100) substrates mis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3687fffc67df8933045402f88589b8a
https://doi.org/10.1117/12.164935
https://doi.org/10.1117/12.164935