Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Terence G. W. Blake"'
Autor:
Yunchen Qiu, R. Acklin, Xiao-Hong Du, K. Remack, Anand Seshadri, John Y. Fong, D. Liu, W.F. Kraus, J. Roscher, Terence G. W. Blake, Scott R. Summerfelt, S. Natarajan, Sudhir K. Madan, J. Eliason, Ning Qian, J. Rodriguez, Theodore S. Moise, Hugh P. McAdams
Publikováno v:
IEEE Journal of Solid-State Circuits. 39:667-677
A low-voltage (1.3 V) 64-Mb ferroelectric random access memory (FRAM) using a one-transistor one-capacitor (1T1C) cell has been fabricated using a state-of-the-art 130-nm transistor and a five-level Cu/flouro-silicate glass (FSG) interconnect process
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7e72f99594fe2fa51ee0ec491ad866f3
https://doi.org/10.1109/jssc.2004.825241
https://doi.org/10.1109/jssc.2004.825241
Publikováno v:
IEEE Journal of Solid-State Circuits. 31:430-436
A scaleable gate array has been designed in half-micron CMOS for a wide range of high-speed and high-density applications. Transistor size and position within the basecell provide an efficient implementation of flip-flops, combinational gates, and me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f77f1199bbcd00ae8dbd0de779fe532c
https://doi.org/10.1109/4.494205
https://doi.org/10.1109/4.494205
Autor:
Theodore S. Moise, Xiao-Hong Du, Scott R. Summerfelt, Ralph H. Lanham, Jürgen T. Rickes, R. Acklin, J. Eliason, C. Pietrzyk, Hugh P. McAdams, John Y. Fong, Y. Qui, N. Qian, Anand Seshadri, S. Natarajan, Sudhir K. Madan, J. Roscher, F. Li, W.F. Kraus, D. Liu, Terence G. W. Blake
Publikováno v:
2003 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.03CH37408).
A low-voltage (1.3V), 64 Mbit Ferroelectric Random Access Memory using a 1-transistor, 1-capacitor (1T1C) cell is demonstrated. This is the largest FRAM memory demonstrated to date. The memory is constructed using a state-of-the-art 130 nm transistor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4ce4ca72e1c04ad00d7436d279f8c8e
https://doi.org/10.1109/vlsic.2003.1221194
https://doi.org/10.1109/vlsic.2003.1221194