Zobrazeno 1 - 10
of 52
pro vyhledávání: '"Teodor K, Todorov"'
Autor:
Murat Onen, Tayfun Gokmen, Teodor K. Todorov, Tomasz Nowicki, Jesús A. del Alamo, John Rozen, Wilfried Haensch, Seyoung Kim
Publikováno v:
Frontiers in Artificial Intelligence, Vol 5 (2022)
Analog crossbar arrays comprising programmable non-volatile resistors are under intense investigation for acceleration of deep neural network training. However, the ubiquitous asymmetric conductance modulation of practical resistive devices criticall
Externí odkaz:
https://doaj.org/article/1af78532c4534d7194bbf6db0d93a1e1
Autor:
Teodor K. Todorov, Saurabh Singh, Douglas M. Bishop, Oki Gunawan, Yun Seog Lee, Talia S. Gershon, Kevin W. Brew, Priscilla D. Antunez, Richard Haight
Publikováno v:
Nature Communications, Vol 8, Iss 1, Pp 1-8 (2017)
Wide band gap semiconductors are important for the development of tandem photovoltaics. By introducing buffer layers at the front and rear side of solar cells based on selenium; Todorov et al., reduce interface recombination losses to achieve photoco
Externí odkaz:
https://doaj.org/article/9343b1c7f0884559a79aac2c37e2e4a7
Autor:
Holt Bui, Matthew Copel, Damon B. Farmer, G. Fraczak, Charles Tabachnick, John A. Ott, Teodor K. Todorov, George G. Totir, Marinus Hopstaken
Publikováno v:
Chemistry of Materials. 33:2267-2273
Atomic layer deposition of tungsten oxide thin films using bis(t-butylimido)-bis(dimethylamido)tungsten is investigated using various oxygen precursors. Significant amounts of unreacted nitrogen or...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba8aa57efff8b97d6bb83c2552f679f6
https://doi.org/10.1021/acs.chemmater.0c03928
https://doi.org/10.1021/acs.chemmater.0c03928
Publikováno v:
Microscopy and Microanalysis. 27:172-174
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc4364a1d8a5f14ab5a164d501505e0a
https://doi.org/10.1017/s1431927621001227
https://doi.org/10.1017/s1431927621001227
Autor:
Murat, Onen, Tayfun, Gokmen, Teodor K, Todorov, Tomasz, Nowicki, Jesús A, Del Alamo, John, Rozen, Wilfried, Haensch, Seyoung, Kim
Analog crossbar arrays comprising programmable non-volatile resistors are under intense investigation for acceleration of deep neural network training. However, the ubiquitous asymmetric conductance modulation of practical resistive devices criticall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fe9770806be38e81a3190e77d9ca21b3
Autor:
Douglas M. Bishop, Yun Seog Lee, Nam Joong Jeon, Jun Hong Noh, Teodor K. Todorov, Xiaoyan Shao, Byungha Shin, Oki Gunawan, David B. Mitzi, Yudistira Virgus, Seong Ryul Pae
Publikováno v:
Nature. 575:151-155
The fundamental parameters of majority and minority charge carriers—including their type, density and mobility—govern the performance of semiconductor devices yet can be difficult to measure. Although the Hall measurement technique is currently t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5980e8709104a57bba7d95d3e1809852
https://doi.org/10.1038/s41586-019-1632-2
https://doi.org/10.1038/s41586-019-1632-2
Autor:
Douglas M. Bishop, Matthew Copel, John Rozen, Paul M. Solomon, John Collins, Teodor K. Todorov, K.-L. Lee, Simon Dawes, Damon B. Farmer
Publikováno v:
IRPS
Metal-oxide based Electrochemical Random-Access Memory (MO-ECRAM) has shown unique potential as a nonvolatile element for analog in-memory computation of deep learning tasks. Using a specially designed interdigitated device geometry, we investigate t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3eb357df7b1538f8882833ad75ba2f75
https://doi.org/10.1109/irps46558.2021.9405156
https://doi.org/10.1109/irps46558.2021.9405156
Autor:
Aron Walsh, Edgardo Saucedo, Teodor K. Todorov, Jiang Tang, Lydia Helena Wong, Jonathan D. Major, Andriy Zakutayev, Xiaojing Hao
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da27c99ce29f47ebedf7609fca9bb669
https://doi.org/10.1088/2515-7655/abebca/v2/response1
https://doi.org/10.1088/2515-7655/abebca/v2/response1
Autor:
David B. Mitzi, Panagiota Arnou, O. Vigil-Galán, Rakesh Agrawal, S. Bourdais, Hugh W. Hillhouse, Zouheir Sekkat, Teodor K. Todorov, Phillip J. Dale, Swapnil D. Deshmukh, M. Valdés, Safae Aazou
Publikováno v:
Journal of Physics: Energy
CONICET Digital (CONICET)
Consejo Nacional de Investigaciones Científicas y Técnicas
instacron:CONICET
CONICET Digital (CONICET)
Consejo Nacional de Investigaciones Científicas y Técnicas
instacron:CONICET
Large-scale deployment of photovoltaic modules is required to power our renewable energy future. Kesterite, Cu2ZnSn(S, Se)4, is a p-type semiconductor absorber layer with a tunable bandgap consisting of earth abundant elements, and is seen as a poten
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::630c3a17250cfafd64f862a0953548a8
http://orbilu.uni.lu/handle/10993/42692
http://orbilu.uni.lu/handle/10993/42692
Autor:
K.-L. Lee, Matthew Copel, Vijay Narayanan, Teodor K. Todorov, Paul M. Solomon, Tayfun Gokmen, John A. Ott, Takashi Ando, Hiroyuki Miyazoe, Seyoung Kim, Douglas M. Bishop, Murat Onen, Damon B. Farmer, John Rozen
Publikováno v:
2019 IEEE International Electron Devices Meeting (IEDM).
We demonstrate a CMOS-compatible, metal-oxide based Electro-Chemical Random-Access Memory (MO- ECRAM) for high-speed, low-power neuromorphic computing. The device demonstrates symmetric and linear conductance update, large on/off ratio and good reten
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5ea0661b06571bd8741d012c6e865b1
https://doi.org/10.1109/iedm19573.2019.8993463
https://doi.org/10.1109/iedm19573.2019.8993463