Zobrazeno 1 - 10
of 34
pro vyhledávání: '"Teo, L.W."'
Autor:
Teo, L.W., Ho, Van Tai, Tay, M.S., Choi, Wee Kiong, Chim, Wai Kin, Antoniadis, Dimitri A., Fitzgerald, Eugene A.
The effect of germanium (Ge) concentration and the rapid thermal oxide (RTO) layer thickness on the nanocrystal formation and charge storage/retention capability of a trilayer metal-insulator-semiconductor device was studied. We found that the RTO an
Externí odkaz:
http://hdl.handle.net/1721.1/3799
Autor:
Teo, L.W., Ho, Van Tai, Tay, M.S., Lei, Y., Choi, Wee Kiong, Chim, Wai Kin, Antoniadis, Dimitri A., Fitzgerald, Eugene A.
A method of synthesizing and controlling the size of germanium nanocrystals is developed. A tri-layer metal-insulator-semiconductor (MIS) memory device structure comprising of a thin (~5nm) silicon dioxide (SiO₂) layer grown using rapid thermal oxi
Externí odkaz:
http://hdl.handle.net/1721.1/3712
Highly ordered nanoparticle arrays have been successfully fabricated by our group recently using ultra-thin porous alumina membranes as masks in the evaporation process. The sizes of the nanoparticles can be adjusted from 5-10 nm to 200 nm while the
Externí odkaz:
http://hdl.handle.net/1721.1/3662
Autor:
Teo, L.W., Heng, C.L., Ho, V., Tay, M.S., Choi, Wee Kiong, Chim, Wai Kin, Antoniadis, Dimitri A., Fitzgerald, Eugene A.
A novel method of synthesizing and controlling the size of germanium nanocrystals was developed. A tri-layer structure comprising of a thin (~5nm) SiO₂ layer grown using rapid thermal oxidation (RTO), followed by a layer of Ge+SiO₂ of varying thi
Externí odkaz:
http://hdl.handle.net/1721.1/3991
Autor:
Heng, C.L., Choi, Wee Kiong, Chim, Wai Kin, Teo, L.W., Ho, Vincent, Tjiu, W.W., Antoniadis, Dimitri A.
A metal-insulator-semiconductor (MIS) device with a trilayer insulator structure consisting of sputtered SiO₂ (~50nm)/evaporated pure germanium (Ge) layer (2.4nm)/rapid thermal oxide (~5nm) was fabricated on a p-type Si substrate. The MIS device wa
Externí odkaz:
http://hdl.handle.net/1721.1/3969
Publikováno v:
In Microelectronic Engineering 2003 66(1):218-223
Publikováno v:
In Microelectronic Engineering 2003 66(1):33-38
Akademický článek
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Autor:
Han, J.P., Utomo, H., Teo, L.W., Rovedo, N., Luo, Z., Krishnasamy, R., Stierstorfer, R., Chong, Y.F., Fang, S., Ng, H., Holt, J., Adam, T.N., Kempisty, J., Gutmann, A., Schepis, D., Mishra, S., Zhuang, H., Kim, J.J., Li, J., Murphy, R.
Publikováno v:
2006 International Electron Devices Meeting; 2006, p1-4, 4p
Publikováno v:
MRS Online Proceedings Library; 2004, Vol. 818 Issue 1, p72-77, 6p