Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Tengzhi Yang"'
Autor:
Lei Zhao, Meiyin Yang, Jianfeng Gao, Tengzhi Yang, Yan Cui, Jing Xu, Junfeng Li, Qingyi Xiang, Wenjing Li, Feilong Luo, Li Ye, Jun Luo
Publikováno v:
IEEE Electron Device Letters. 44:408-411
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9dbc874b4ab7023b58cea16090716005
https://doi.org/10.1109/led.2023.3236835
https://doi.org/10.1109/led.2023.3236835
Autor:
Lei Zhao, Meiyin Yang, Jianfeng Gao, Tengzhi Yang, Yan Cui, Jing Xu, Junfeng Li, Bingjun Yang, Lei Yue, Chao Zuo, Jun Luo
Publikováno v:
IEEE Electron Device Letters. 43:1239-1242
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07adcee5a4e4c2913d98ea3a29d379c5
https://doi.org/10.1109/led.2022.3186427
https://doi.org/10.1109/led.2022.3186427
Publikováno v:
Spintronics. :179-201
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e454ce89685ef7b50f409ff464986e9
https://doi.org/10.1002/9781119698968.ch7
https://doi.org/10.1002/9781119698968.ch7
Autor:
Tengzhi Yang, Meiyin Yang, Lei Zhao, Jianfeng Gao, Qingyi Xiang, Wenjing Li, Feilong Luo, Li Ye, Jun Luo
Publikováno v:
IEEE Electron Device Letters. 43:709-712
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06632817db221127591c111124bd74a7
https://doi.org/10.1109/led.2022.3159259
https://doi.org/10.1109/led.2022.3159259
Autor:
Junshuai Li, Chenglin Zhao, Qingzhu Zhang, Anyan Du, Jie Zhao, Yu-Xin Lu, Shujuan Mao, Haizhou Yin, Guohong Wang, Xuezheng Ai, Xiaolong Ma, Yongkui Zhang, Jianfeng Gao, Kunpeng Jia, Jingyan Li, Yankui Li, Guangwei Xu, Tianchun Ye, Zhenhua Wu, Jinjuan Xiang, Hui Yang, Yadong Zhang, Weiying Wang, G. B. Bai, Jun-Wei Luo, Tengzhi Yang, Huilong Zhu, Lu Xie, Xiaobin He, Yadong Li, Yaodong Liu, Wei Huang, Xiaogen Yin, Chunlong Li, Henry H. Radamson
Publikováno v:
IEEE Transactions on Electron Devices. 68:2604-2610
We presented and demonstrated a new type of vertical nanowire (NW) and nanosheet (NS) field-effect transistors (FETs), named vertical sandwich gate-all-around FETs or VSAFETs, which were formed with the process compatible in the main stream industry.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f493bbd30ae72b8d4b6d8f96ebac4cfc
https://doi.org/10.1109/ted.2021.3072879
https://doi.org/10.1109/ted.2021.3072879
Autor:
Qinzhu Zhang, L. H. Zhao, Huilong Zhu, Tianchun Ye, Jianghao Han, Jinjuan Xiang, Junshuai Li, Xuezheng Ai, Qingzhu Zhang, Hui Yang, Lin-Pu Li, Tengzhi Yang, Anyan Du, Na Zhou, Yongkui Zhang, Jingyan Li, G. B. Bai, Xiaobin He, Xiaolong Ma, Chenglin Zhao, Weixing Huang, Yankui Li, Henry H. Radamson, Kunpeng Jia, Z. H. Xuan, Xiaogen Yin, Jun Luo, R. L. Chen, Yao Lu, Weiying Wang, Yadong Zhang, Guilei Wang, Y. Qu, Shujuan Mao, Yaohui Zhang, Zhenhua Wu, Chunlong Li, Shishuai Ma, Lu Xie, Zhenzhen Kong, Haizhou Yin, Jianfeng Gao, J. Zhao
Publikováno v:
IEEE Electron Device Letters. 41:8-11
A new type of vertical nanowire (NW)/ nanosheet (NS) field-effect transistors (FETs), termed vertical sandwich gate-all-around (GAA) FETs (VSAFETs), is presented in this work. Moreover, an integration flow that is compatible with processes used in th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8b1973655bcd7425289d445c5c6ea1f
https://doi.org/10.1109/led.2019.2954537
https://doi.org/10.1109/led.2019.2954537
Autor:
Jia Chen, Lei Zhao, Guoliang Tian, Tengzhi Yang, Wei Cao, Jing Xu, Jianfeng Gao, Junfeng Li, Wenwu Wang, Jin Kang, Weihai Bu, Kai Zheng, Bingjun Yang, Lei Yue, Yan Cui, Jun Luo
Publikováno v:
Japanese Journal of Applied Physics. 61:SJ1006
We investigate the voltage-controlled magnetism effect of HfZrO/CoFeB hybrid film and a Hall device with perpendicular magnetic anisotropy. The magnetization versus magnetic field experiments and anomalous Hall experiments before and after applying v
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a94f63422cecdff4dac843bd26773a98
https://doi.org/10.35848/1347-4065/ac5a29
https://doi.org/10.35848/1347-4065/ac5a29
Autor:
Sumei Wang, Jing Xu, Cui Yan, Jun Luo, Tengzhi Yang, Nan Zhang, Kaiyou Wang, Meiyin Yang, Xueying Zhang, Shaoxin Li, Peiyue Yu, Chao Zhao, Yongcheng Deng, Yu Sheng, Li Yanru
We present an alternative mechanism to control domain wall motion, whose directions are manipulated by the amplitude of electrical current rather than its sign when modulating the exchange stiffness A while maintaining the Dzyaloshinskii-Moriya inter
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9bdec8e76c58cb25a571221286bd5908
Publikováno v:
Journal of Magnetism and Magnetic Materials. 529:167823
We investigated the thermal stability of spin-orbit torque magnetic tunnel junction (SOT-MTJ) thin films by tuning multiple interlayer couplings among synthetic anti-ferromagnetic layer (SAF), reference layer and free layer. We find that the bridge l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::827f31afde5164e44ab356a525f4e032
https://doi.org/10.1016/j.jmmm.2021.167823
https://doi.org/10.1016/j.jmmm.2021.167823
Autor:
Jun Luo, Shiyu Wang, Jing Xu, Li Yanru, Jing Zhang, Huiming He, Tengzhi Yang, Cui Yan, Meiyin Yang
Publikováno v:
Journal of Semiconductors. 42:024102
Magnetoresistive random access memories (MRAMs) have drawn the attention of radiation researchers due to their potential high radiation tolerance. In particular, spin-orbit torque MRAM (SOT-MRAM) has the best performance on endurance and access speed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09711038a36f076f101faed0a00d3b09
https://doi.org/10.1088/1674-4926/42/2/024102
https://doi.org/10.1088/1674-4926/42/2/024102