Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Teng-Hao Yeh"'
Autor:
Ming-Liang Wei, Hang-Ting Lue, Shu-Yin Ho, Yen-Po Lin, Tzu-Hsuan Hsu, Chih-Chang Hsieh, Yung-Chun Li, Teng-Hao Yeh, Shih-Hung Chen, Yi-Hao Jhu, Hsiang-Pang Li, Han-Wen Hu, Chun-Hsiung Hung, Keh-Chung Wang, Chih-Yuan Lu
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22f60ad8ecdf1157c488a000d962a1fb
https://doi.org/10.1109/iedm45625.2022.10019495
https://doi.org/10.1109/iedm45625.2022.10019495
Autor:
Wei-Chen Chen, Hang-Ting Lue, Meng-Yan Wu, Teng-Hao Yeh, Pei-Ying Du, Tzu-Hsuan Hsu, Chih-Chang Hsieh, Keh-Chung Wang, Chih-Yuan Lu
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8bf43e1acba592a9aba4b0e784feaf95
https://doi.org/10.1109/iedm45625.2022.10019464
https://doi.org/10.1109/iedm45625.2022.10019464
Autor:
Hang-Ting Lue, Chung-Hao Fu, Tzu-Hsuan Hsu, Ming-Liang Wei, Teng-Hao Yeh, Keh-Chung Wang, Chih-Yuan Lu
Publikováno v:
2022 IEEE Silicon Nanoelectronics Workshop (SNW).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c77f3077057b21230046c71dd06348f5
https://doi.org/10.1109/snw56633.2022.9889068
https://doi.org/10.1109/snw56633.2022.9889068
Autor:
Chia-Jung Chiu, Chih-Yuan Lu, Tzu-Hsuan Hsu, Keh-Chung Wang, Teng-Hao Yeh, Wei-Chen Chen, Pei-Ying Du, Lou Lee, Hang-Ting Lue
Publikováno v:
IEEE Transactions on Electron Devices. 67:5362-5367
A novel double-density hemi-cylindrical (HC) structure 3-D NAND Flash architecture was demonstrated (Lue et al. , 2019). HC 3-D NAND squeezes the gate-all-around (GAA) hole in one direction, followed by a slit cut to split the GAA device to produce t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9e42d473495d7a7236d182b620052b4c
https://doi.org/10.1109/ted.2020.3029999
https://doi.org/10.1109/ted.2020.3029999
Autor:
Cheng-Lin Sung, Sheng-Ting Fan, Hang-Ting Lue, Wei-Chen Chen, Pei-Ying Du, Teng-Hao Yeh, Keh-Chung Wang, Chih-Yuan Lu
Publikováno v:
2022 IEEE International Reliability Physics Symposium (IRPS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e55d59f24f6ec5cb8e66961e32a6af63
https://doi.org/10.1109/irps48227.2022.9764454
https://doi.org/10.1109/irps48227.2022.9764454
Publikováno v:
2021 IEEE International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81d2422a4fbe6b8aa1b66851d64eb6d6
https://doi.org/10.1109/iedm19574.2021.9720706
https://doi.org/10.1109/iedm19574.2021.9720706
Publikováno v:
2021 IEEE International Memory Workshop (IMW).
Recently, we proposed a novel 3D AND-type Flash memory [1]–[3] architecture for 3D NOR Flash solution. In this work, we further propose a “write-in-place” (or “in-place write”) operation (like EEPROM) and demonstrate the feasibility. “Wri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7b9ef69cf0b562985db48705274e810c
https://doi.org/10.1109/imw51353.2021.9439621
https://doi.org/10.1109/imw51353.2021.9439621
Autor:
Teng-Hao Yeh, Chih-Yuan Lu, Pei-Ying Du, Tzu-Hsuan Hsu, Chia-Jung Chiu, Po-Kai Hsu, Hang-Ting Lue, Guan-Ru Lee, Keh-Chung Wang
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
We develop a vertical split-gate Flash memory to enable embedded Flash (eFlash) scaling. The device features much smaller cell size ( 30 (at 4-bit resolution, MAC only) and high TOPS/mm2~1 can be achieved. The excellent TOPS/mm2 suggests an effective
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3cc0e93e18840520eb4cdfdbcfd22f6e
https://doi.org/10.1109/iedm13553.2020.9372036
https://doi.org/10.1109/iedm13553.2020.9372036
Autor:
Ming-Liang Wei, Chieh Roger Lo, Keh-Chung Wang, Chih-Yuan Lu, Teng-Hao Yeh, Cheng-Lin Sung, Pei-Ying Du, Han-Wen Hu, Wei-Chen Chen, Shu-Yin Ho, Hang-Ting Lue
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
The analog neuromorphic circuits with functional memory devices are considered as an ultimate ideal approach to mimic the human brain for artificial intelligence (AI). The spiking neural network (SNN) with integrate-and-fire (IF) circuit is the class
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::94399a1f92425c774d095b2edeff2a6c
https://doi.org/10.1109/iedm13553.2020.9372094
https://doi.org/10.1109/iedm13553.2020.9372094