Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Teng Zhongjian"'
Autor:
Luc Thomas, Jesmin Haq, Ru-Ying Tong, Teng Zhongjian, Shen Dongna, Hideaki Fukuzawa, Po-Kang Wang, Guenole Jan, Son Thai Le, Vignesh Sundar, Vinh Lam, Yu-Jen Wang, Jian Zhu, Renren He, Yang Yi, Tom Zhong, Santiago Serrano-Guisan, Paul Y. Liu, Huanlong Liu, Sahil Patel, Yuan-Jen Lee, Jodi Iwata-Harms
Publikováno v:
Scientific Reports, Vol 9, Iss 1, Pp 1-7 (2019)
Scientific Reports
Scientific Reports
Perpendicular magnetic anisotropy (PMA) ferromagnetic CoFeB with dual MgO interfaces is an attractive material system for realizing magnetic memory applications that require highly efficient, high speed current-induced magnetic switching. Using this
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0da8a16e79ec54d59a1371e363c41417
https://doi.org/10.1038/s41598-019-54466-7
https://doi.org/10.1038/s41598-019-54466-7
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Autor:
Tom Zhong, Santiago Serrano-Guisan, Jesmin Haq, Jodi Iwata-Harms, Guenole Jan, Sahil Patel, Teng Zhongjian, Yuan-Jen Lee, Renren He, Son T. Le, Yang Yi, Paul Liu, Vignesh Sundar, Shen Dongna, Luc Thomas, Ru-Ying Tong, Vinh Lam, Yu-Jen Wang, Jian Zhu, Hideaki Fukuzawa, Po-Kang Wang, Huanlong Liu
Publikováno v:
2018 IEEE International Electron Devices Meeting (IEDM).
Last-Level-Cache applications at OX technology nodes require devices switching reliably in less than 10ns at currents smaller than 50uA, while preserving data retention up to 85°C. In this paper, we show that both low Gilbert damping and low magneti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9ecf43055b69484aea50951849f27ca2
https://doi.org/10.1109/iedm.2018.8614700
https://doi.org/10.1109/iedm.2018.8614700
Autor:
Son T. Le, Santiago Serrano-Guisan, Sahil Patel, Jesmin Haq, Vinh Lam, Shen Dongna, Tom Zhong, Renren He, Yang Yi, Vignesh Sundar, Po-Kang Wang, Guenole Jan, Yu-Jen Wang, Jian Zhu, Huanlong Liu, Paul Liu, Yuan-Jen Lee, Luc Thomas, Ru-Ying Tong, Jodi Iwata-Harms, Teng Zhongjian
Publikováno v:
2017 IEEE International Electron Devices Meeting (IEDM).
Scaling STT-MRAM cells beyond 1X technology nodes will require MTJ devices smaller than 30 nm. For such small sizes, process-induced damage becomes a primary factor of device performance. A robust method of assessing magnetic properties of sub-30 nm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66388db61bc92fbf9fe3e3b6fec8e482
https://doi.org/10.1109/iedm.2017.8268516
https://doi.org/10.1109/iedm.2017.8268516
Autor:
Vignesh Sundar, Yang Yi, Yu-Jen Wang, Jian Zhu, Vinh Lam, Shen Dongna, Jesmin Haq, Guenole Jan, Tom Zhong, Po-Kang Wang, Son T. Le, Sahil Patel, Renren He, Huanlong Liu, Santiago Serrano-Guisan, Paul Liu, Yuan-Jen Lee, Jodi Iwata-Harms, Luc Thomas, Ru-Ying Tong, Teng Zhongjian
Publikováno v:
2017 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S).
Spin-Transfer-Torque Magnetic Random Access Memory (STT-MRAM) is emerging as a leading candidate for a variety of embedded memory applications ranging from embedded NVM to working memory and last level cache. In this paper, we review recent breakthro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3d01a4980cebeec2fdabeffea6d4b2a1
https://doi.org/10.1109/s3s.2017.8308734
https://doi.org/10.1109/s3s.2017.8308734
Autor:
Guenole Jan, Luc Thomas, Ru-Ying Tong, Terry Torng, Jesmin Haq, Tom Zhong, Shen Dongna, Son T. Le, Rao Annapragada, Teng Zhongjian, Renren He, Po-Kang Wang, K. Pi, Santiago Serrano-Guisan, Yu-Jen Wang, Jian Zhu, Huanlong Liu, Vinh Lam, Yuan-Jen Lee
Publikováno v:
2015 IEEE International Electron Devices Meeting (IEDM).
Current understanding of thermal stability of perpendicular STT-MRAM based on device-level data suggests that the thermal stability factor A is almost independent of device diameter above ∼30nm. Here we report that contrary to this conventional wis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5934e834181ae08738b17d7c64efc151
https://doi.org/10.1109/iedm.2015.7409773
https://doi.org/10.1109/iedm.2015.7409773
Publikováno v:
2012 International Conference on Systems & Informatics (ICSAI2012); 1/ 1/2012, p1878-1881, 4p
Autor:
Lin Yang, Teng Zhongjian
Publikováno v:
2011 IEEE 3rd International Conference on Communication Software & Networks (ICCSN); 2011, p171-174, 4p
Autor:
Lin Yang, Teng Zhongjian
Publikováno v:
2009 International Conference on Computational Intelligence & Software Engineering; 2009, p1-4, 4p
Autor:
Thomas, Luc, Jan, Guenole, Le, Son, Lee, Yuan-Jen, Liu, Huanlong, Zhu, Jian, Serrano-Guisan, Santiago, Tong, Ru-Ying, Pi, Keyu, Shen, Dongna, He, Renren, Haq, Jesmin, Teng, Zhongjian, Annapragada, Rao, Lam, Vinh, Wang, Yu-Jen, Zhong, Tom, Torng, Terry, Wang, Po-Kang
Publikováno v:
2015 IEEE International Electron Devices Meeting (IEDM); 1/1/2015, p1.4-26.4.4, 0p