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Publikováno v:
Japanese Journal of Applied Physics. 55:08PD04
The device characteristics and hot-carrier-induced degradation of high-voltage n-type metal–oxide–semiconductor transistors with traditional and gradual junctions in the drift region are studied in this work. The gradual junction used in this stu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a9f25e356021d07aca65144f61e65e5f
https://doi.org/10.7567/jjap.55.08pd04
https://doi.org/10.7567/jjap.55.08pd04
Publikováno v:
Japanese Journal of Applied Physics; Aug2016, Vol. 55 Issue 8S2, p1-1, 1p