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Autor:
Ming-Chi Liaw, E. Ching-Song Yang, Huey-Liang Hwang, C.C.-H. Hsu, A. Hsiu-Fen Chou, Ya-Chin King, Cheng-Jye Liu, Ten-Sen Chao, Hsiu-Hsiang Pong
Publikováno v:
IEEE Transactions on Electron Devices. 48:1386-1393
In this paper a recently proposed bidirectional tunneling program/erase (P/E) NOR-type (BiNOR) flash memory is extensively investigated. With the designated localized p-well structure, uniform Fowler-Nordheim (FN) tunneling is first fulfilled for bot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8151adb3bff57fdd88d81f483572ec39
https://doi.org/10.1109/16.930656
https://doi.org/10.1109/16.930656
