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of 55
pro vyhledávání: '"Temmler, D."'
31st European Photovoltaic Solar Energy Conference and Exhibition; 1036-1041
Several papers have been published concerning the electron beam deposition of silicon thin films followed by a vacuum interruption and crystallization process. Mostly t
Several papers have been published concerning the electron beam deposition of silicon thin films followed by a vacuum interruption and crystallization process. Mostly t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::514699977e30ac0fdfae79b3592e7852
31st European Photovoltaic Solar Energy Conference and Exhibition; 1022-1025
High rate silicon vacuum deposition by electron beam evaporation is very attractive because of economic reasons as well as because of the high layer purity. Both are ur
High rate silicon vacuum deposition by electron beam evaporation is very attractive because of economic reasons as well as because of the high layer purity. Both are ur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::60566e7977cf9354f3914c6ad262be70
Autor:
Bodenstein, E., Temmler, D.
31st European Photovoltaic Solar Energy Conference and Exhibition; 1287-1289
Despite long-lasting development, high temperature hydrogen bakes and various types of plasma treatments are not yet generally satisfying as in-situ dry pre-clean steps
Despite long-lasting development, high temperature hydrogen bakes and various types of plasma treatments are not yet generally satisfying as in-situ dry pre-clean steps
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::622e482e3dacd70331a6d15a799a5415
29th European Photovoltaic Solar Energy Conference and Exhibition; 1900-1903
In earlier electron beam physical vapor deposition tests (EB-PVD), using a conventional copper crucible (A), high Si deposition rates at relatively high EB power togeth
In earlier electron beam physical vapor deposition tests (EB-PVD), using a conventional copper crucible (A), high Si deposition rates at relatively high EB power togeth
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c8ed0b7b8c6f4328ced88bd1c570db0
Publikováno v:
Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices & Circuits; 1995, p142-151, 10p
Autor:
Heineck, L., Graf, W., Popp, M., Savignac, D., Moll, H.-P., Tews, R., Temmler, D., Kar, G., Schmid, J., Rouhanian, M., Uhlig, I., Goldbach, M., Landgraf, E., Dreeskornfeld, L., Drubba, M., Lukas, S., Weinmann, D., Roesner, W., Mueller, W.
Publikováno v:
2007 IEEE International Electron Devices Meeting; 2007, p31-34, 4p
Autor:
Schloesser, T., Manger, D., Weis, R., Slesazeck, S., Lau, F., Tegen, S., Sesterhenn, M., Muemmler, M., Nuetzel, J., Temmler, D., Kowalski, B., Scheler, U., Stavrev, M., Koehler, D.
Publikováno v:
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004; 2004, p57-60, 4p
Publikováno v:
ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003; 2003, p387-390, 4p
Autor:
Pompl, T., Kerber, M., Innertsberger, G., Allers, K.-H., Obry, M., Krasemann, A., Temmler, D.
Publikováno v:
2002 IEEE International Reliability Physics Symposium. Proceedings 40th Annual (Cat. No.02CH37320); 2002, p393-403, 11p
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