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pro vyhledávání: '"Telecky, Alan J."'
Autor:
Telecky, Alan J.
The chemistry of hafnium oxide based and materials are described in the context of ion exchange and lithography. HafSOx, represented by the composition HfO₂₋[subscript x](SO₄)x, is described to possess a significant capacity towards ion exchang
Externí odkaz:
http://hdl.handle.net/1957/29732
Autor:
Wallow, Thomas I., Hohle, Christoph K., Grenville, Andrew, Anderson, Jeremy T., Clark, Benjamin L., De Schepper, Peter, Edson, Joseph, Greer, Michael, Jiang, Kai, Kocsis, Michael, Meyers, Stephen T., Stowers, Jason K., Telecky, Alan J., De Simone, Danilo, Vandenberghe, Geert
Publikováno v:
Proceedings of SPIE; March 2015, Vol. 9425 Issue: 1 p94250S-94250S-8, 848259p
