Zobrazeno 1 - 10
of 102
pro vyhledávání: '"Tejas Krishnamohan"'
Publikováno v:
Microelectronic Engineering. 88:3428-3431
The effect of electrical quality of interfacial oxide on Ge MOSCAP and MOSFET characteristics is investigated. Different growth conditions are studied to optimize the interfacial layer. CV and D"i"t measurements are done for accurate comparison of di
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95060884ce52a7ad1baed70677ded902
https://doi.org/10.1016/j.mee.2010.04.011
https://doi.org/10.1016/j.mee.2010.04.011
Autor:
Krishna C. Saraswat, Tejas Krishnamohan, Aneesh Nainani, Duygu Kuzum, Piero Pianetta, H.-S. Philip Wong, Yun Sun
Publikováno v:
IEEE Transactions on Electron Devices. 58:59-66
Ge N-MOSFETs have exhibited poor drive currents and low mobility, as reported by several different research groups in the past. The major mechanisms behind poor Ge NMOS performance have not been completely understood yet. In this paper, mechanisms re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32d34d08fae34d8000be1b8b49d9b24d
https://doi.org/10.1109/ted.2010.2088124
https://doi.org/10.1109/ted.2010.2088124
Publikováno v:
IEEE Transactions on Electron Devices. 56:648-655
In this paper, we demonstrate high-mobility bulk Ge N- and P-FETs with GeON gate dielectric. The highest electron mobility to date in Ge is reported, and two times improvement over universal hole mobility is achieved for Ge P-FETs. For the first time
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::572de14ce9ecb467eac41656f9a6162c
https://doi.org/10.1109/ted.2009.2014198
https://doi.org/10.1109/ted.2009.2014198
Publikováno v:
ECS Transactions. 16:47-55
Due to their extremely high electron mobility ( ), alternative semiconductor materials such as Germanium (Ge) and III-V materials are being investigated as channel materials for high performance NMOS [1-4]. Although their small transport mass leads t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::27977a3075a68cf7d050c31d38e065a3
https://doi.org/10.1149/1.2986752
https://doi.org/10.1149/1.2986752
Autor:
James P. McVittie, Tejas Krishnamohan, Piero Pianetta, Paul C. McIntyre, Duygu Kuzum, Yun Sun, Yasuhiro Oshima, Krishna C. Saraswat, Abhijit Pethe
Publikováno v:
ECS Transactions. 16:1025-1029
Passivation of Ge has been a critical issue for Ge MOS applications in future technology nodes. In this work, we introduce ozone-oxidation and low temperature plasma nitridation to engineer Ge/insulator interface. Density of interface states (Dit) ac
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::827051884c6a93f8fc5aa108734149b5
https://doi.org/10.1149/1.2986865
https://doi.org/10.1149/1.2986865
Publikováno v:
ECS Transactions. 8:9-14
Diminishing improvement in the on current (ION) and increase in off current (IOFF) may limit the scaling of bulk Si CMOS. There are several technical issues that make proper device scaling increasingly difficult. Various techniques like ultra-thin ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7f1b39d5873d721994e17b21cf5f017
https://doi.org/10.1149/1.2767279
https://doi.org/10.1149/1.2767279
Publikováno v:
IEEE Transactions on Electron Devices. 54:439-445
The theoretical performance of carbon nanotube field-effect transistors (CNFETs) with Schottky barriers (SBs) is examined by means of a general ballistic model. A novel approach is used to treat the SBs at the metal-nanotube contacts as mesoscopic sc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b6e3a0489f91cdb4f93e272c169a72c0
https://doi.org/10.1109/ted.2006.890384
https://doi.org/10.1109/ted.2006.890384
Autor:
Krishna C. Saraswat, Abhijit Pethe, Ammar Nayfeh, Donghyun Kim, Tejas Krishnamohan, Chi On Chui
Publikováno v:
Materials Science and Engineering: B. 135:242-249
Ge is a very promising material as future channel materials for nanoscale MOSFETs due to its high mobility and thus a higher source injection velocity, which translates into higher drive current and smaller gate delay. However, for Ge to become main-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::125cc5d9a781565cdb5ab1b67733330f
https://doi.org/10.1016/j.mseb.2006.08.014
https://doi.org/10.1016/j.mseb.2006.08.014
Publikováno v:
ECS Transactions. 3:687-695
High mobility channel materials are very promising for enhanced transport in future nanoscale MOSFETs. However, because of their reduced bandgap, large Band-To-Band Tunneling (BTBT) leakage currents can ultimately limit the scalability of FETs incorp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29d7675f2ca40b3a20120b6cdc4c2ac7
https://doi.org/10.1149/1.2355864
https://doi.org/10.1149/1.2355864
Autor:
C.D. Nguyen, Tejas Krishnamohan, Christoph Jungemann, Donghyun Kim, Yoshio Nishi, Krishna C. Saraswat
Publikováno v:
IEEE Transactions on Electron Devices. 53:1000-1009
Large band-to-band tunneling (BTBT) leakage currents can ultimately limit the scalability of high-mobility (small-bandgap) materials. This paper presents a novel heterostructure double-gate FET (DGFET) that can significantly reduce BTBT leakage curre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5af44beba793029ced8aff5cd4c6689c
https://doi.org/10.1109/ted.2006.872367
https://doi.org/10.1109/ted.2006.872367