Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Tejas Jhaveri"'
Autor:
Jason D. Hibbeler, Lars W. Liebmann, Andrzej J. Strojwas, Larry Pileggi, Vyacheslav Rovner, Tejas Jhaveri
Publikováno v:
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 29:509-527
The financial backbone of the semiconductor industry is based on doubling the functional density of integrated circuits every two years at fixed wafer costs and die yields. The increasing demands for 'computational' rather than 'physical' lithography
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbe157d77b4d9630f7f6fa738b12c7ff
https://doi.org/10.1109/tcad.2010.2042882
https://doi.org/10.1109/tcad.2010.2042882
Publikováno v:
SPIE Proceedings.
The traditional design rule paradigm of defining the illegal areas of the design space has been deteriorating at the advanced technology nodes. Radical design space restrictions, advocated by the regular design fabrics methodology, provide an opportu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b18e0b100ecc9c32b73b65f7f3f345a
https://doi.org/10.1117/12.879514
https://doi.org/10.1117/12.879514
Autor:
Tejas Jhaveri, Andrzej Strojwas
Publikováno v:
SPIE Proceedings.
Layout pattern minimization has become a necessity at the 20nm technology node. Not only is it the only way to guarantee convergence for source mask optimization, having a well defined design space by limiting the total number of layout patterns, is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3b3182bf99c96a5ba8565afc149e965
https://doi.org/10.1117/12.879234
https://doi.org/10.1117/12.879234
Autor:
Zhipan Li, Robert John Socha, Tejas Jhaveri, Xiaofeng Liu, Luoqi Chen, Stephen Hsu, Andrzej Strojwas, Mircea Dusa
Publikováno v:
SPIE Proceedings.
In this paper the co-optimization of the source, mask, and design is discussed. In particular the printing of the pdBRIX logic templates and SRAM cell is investigated through Tachyon SMO for the contact and metal 1 layer. Both the SRAM and pdBRIX log
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06c86ef2de0bc8d4b42f88a5962ef35e
https://doi.org/10.1117/12.865781
https://doi.org/10.1117/12.865781
Publikováno v:
SPIE Proceedings.
The semiconductor industry has pursued a rapid pace of technology scaling to achieve an exponential component cost reduction. Over the years the goal of technology scaling has been distilled down to two discrete targets. Process engineers focus on su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95dba2ecc95ffe3dd32942af74c98a5c
https://doi.org/10.1117/12.846556
https://doi.org/10.1117/12.846556
Autor:
Nathaniel D. Hieter, Tejas Jhaveri, Vyacheslav Rovner, Larry Pileggi, Lars W. Liebmann, Jason D. Hibbeler, Matthew Moe
Publikováno v:
SPIE Proceedings.
The concept of template-based design-technology co-optimization as a means of curbing escalating design complexity and increasing technology qualification risk is described. Data is presented highlighting the design efficacy of this proposal in terms
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4f1cea287de94f3274e19b0ffc370e2c
https://doi.org/10.1117/12.848244
https://doi.org/10.1117/12.848244
Autor:
Tejas Jhaveri, Andrzej J. Strojwas
Publikováno v:
SPIE Proceedings.
Is it argued that computational lithography is made tractable by limiting the number of unique layout patterns in the design. The use of regular design fabrics have been proposed and successfully used to create designs by introducing deviations to an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76513625ad17204ce316ac11e0f1316b
https://doi.org/10.1117/12.846367
https://doi.org/10.1117/12.846367
Publikováno v:
SPIE Proceedings.
The unavailability of extreme ultra violet lithography (EUVL) for mass production of the 22nm technology node has created a significant void for mainstream lithography solutions. To fill this void, alternate lithography solutions that were earlier de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::652b71a7f0389b4345be304fa0fe581c
https://doi.org/10.1117/12.837240
https://doi.org/10.1117/12.837240
Publikováno v:
DAC
Achieving the required time-to-market with economically acceptable yield levels and maintaining them in volume production has become a daunting task for the advanced technology nodes. These difficulties are primarily attributable to the increase in p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c0ebcb84b51230f80a174df56f3e9863
https://doi.org/10.1145/1629911.1629941
https://doi.org/10.1145/1629911.1629941
Autor:
Jason D. Hibbeler, Larry Pileggi, Tejas Jhaveri, Lars W. Liebmann, Greg Northrop, Vyacheslav Rovner
Publikováno v:
SPIE Proceedings.
The time-to-market driven need to maintain concurrent process-design co-development, even in spite of discontinuous patterning, process, and device innovation is reiterated. The escalating design rule complexity resulting from increasing layout sensi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7a55a7906aa39f23b00c08f369faa2a
https://doi.org/10.1117/12.814701
https://doi.org/10.1117/12.814701