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pro vyhledávání: '"Teissier R"'
We describe the properties of a continuous-wave room-temperature quantum cascade laser operating at the long wavelength of 17 $\mu$m. Long wavelength mid-infrared quantum cascade lasers offer new opportunities for chemical detection, vibrational spec
Externí odkaz:
http://arxiv.org/abs/2310.16460
Autor:
Cherotchenko, E. D., Dudelev, V. V., Mikhailov, D. A., Losev, S. N., Babichev, A. V., Gladyshev, A. G., Novikov, I. I., Lutetskiy, A. V., Veselov, D. A., Slipchenko, S. O., Pikhtin, N. A., Karachinsky, L. Ya., Denisov, D. V., Kuchinskii, V. I., Kognovitskaya, E. A., Egorov, A. Yu., Teissier, R., Baranov, A. N., Sokolovskii, G. S.
We present an experimental study of the turn-on delay in pulsed mid-infrared quantum cascade lasers. We report the unexpectedly long delay time depending on the pumping current, which does not agree with conventional theoretical predictions for step-
Externí odkaz:
http://arxiv.org/abs/2106.13658
Autor:
Delteil, A., Vasanelli, A., Jouy, P., Barate, D., Moreno, J. C., Teissier, R., Baranov, A. N., Sirtori, C.
Publikováno v:
Physical Review B 83, 081404(R) (2011)
A signature of the scattering between microcavity polaritons and longitudinal optical phonons has been observed in the electroluminescence spectrum of an intersubband device operating in the light-matter strong coupling regime. By electrical pumping
Externí odkaz:
http://arxiv.org/abs/1212.4772
Autor:
Faugeras, C., Wade, A., Leuliet, A., Vasanelli, A., Sirtori, C., Fedorov, G., Smirnov, D., Teissier, R., Baranov, A., Barate, D., Devenson, J.
Publikováno v:
Phys. Rev. B 74, 113303, (2006)
The quantum efficiency of an electroluminescent intersubband emitter based on InAs/AlSb has been measured as a function of the magnetic field up to 20T. Two series of oscillations periodic in 1/B are observed, corresponding to the elastic and inelast
Externí odkaz:
http://arxiv.org/abs/cond-mat/0607631
Complex photonic band structures (CPBS) of transmission metallic gratings with rectangular slits are shown to exhibit strong discontinuities that are not evidenced in the usual energetic band structures. These discontinuities are located on Wood's an
Externí odkaz:
http://arxiv.org/abs/physics/0007082
Autor:
Tournié, E, Remis, A, Paparella, M, Gilbert, A, Monge-Bartolomé, L, Rio-Calvo, M, Diaz Thomas, D. A., Loghmari, Z, Cerutti, L, Baranov, A, Teissier, R, Rodriguez, J.-B
Publikováno v:
45th Freiburg Infrared Colloquium
45th Freiburg Infrared Colloquium, May 2023, Freiburg (Allemagne), Germany
45th Freiburg Infrared Colloquium, May 2023, Freiburg (Allemagne), Germany
International audience; The direct epitaxy of III-V lasers on Silicon (Si) substrates has been considered for decades as an important objective for the realization of integrated photonics chips. However, the difference in crystal structure, lattice-c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3379::348dd472a3388580eb8cfafe7f0bd6e4
https://hal.science/hal-04121335
https://hal.science/hal-04121335
Akademický článek
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Autor:
Beuzit, C., L’Hour, M.-C., Roudaut, S., Gouillou, M., Metz, C., Moineau, M.-P., Kerspern, H., de Parscau, L., Teissier, R.
Publikováno v:
In Archives de pédiatrie November 2015 22(11):1112-1118
Autor:
Kinjalk, K., Gilbert, A., Remis, A., Loghmari, Z., Cerutti, L., Patriarche, G., Bahriz, M., Teissier, R., Baranov, A. N., Rodriguez, J. B., Tournié, E.
Publikováno v:
Optics Express
Silicon (Si) photonics can have a major impact on the development of mid-IR photonics by leveraging on the reliable and high-volume fabrication technologies already developed for microelectronic integrated circuits. Germanium (Ge), already used in Si
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::624942cfc8642a5c4599511aefcc9d4a
https://pubmed.ncbi.nlm.nih.gov/36522932
https://pubmed.ncbi.nlm.nih.gov/36522932
Autor:
Tournié, Eric, Calvo, M, Monge-Bartolome, L, Gilbert, A, Remis, A, Paparella, M, Thomas, D, Loghmari, Z, Teissier, R, Baranov, A, Cerutti, L, Rodriguez, J.-B
Publikováno v:
Inteernational Conference on Molecular beam Epitaxy, ICMBE 2022
Inteernational Conference on Molecular beam Epitaxy, ICMBE 2022, Sep 2022, Sheffield, United Kingdom
Inteernational Conference on Molecular beam Epitaxy, ICMBE 2022, Sep 2022, Sheffield, United Kingdom
International audience; MBE Growth of Mid-Infrared Lasers on Silicon Eric Tournié, M. Rio Calvo, L. Monge-Bartolome, A. Gilbert, A. Remis, M. Paparella, D. Andres Thomas, Z. Loghmari, R. Teissier, A. N. Baranov, L. Cerutti, and J.-B. RodriguezIES, U
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______3379::ee9043051e2bff415352432313414147
https://hal.science/hal-03791638
https://hal.science/hal-03791638