Zobrazeno 1 - 10
of 13
pro vyhledávání: '"Teh-Hsuang Lee"'
Autor:
Teh-Hsuang Lee, Yung-Rai R. Lee, B.C. Burkey, Charles V. Stancampiano, Georgia R. Torok, James P. Lavine, Eric G. Stevens, R.P. Khosla, David Newell Nichols, Stephen L. Kosman, David L. Losee
Publikováno v:
International Journal of Imaging Systems and Technology. 5:323-329
Two interline, 30 frames/second, high-resolution image sensors are described that use two-phase charge coupled device (CCD) technology. One is a two-megapixel, interlaced high-definition television, sensor, and the other is a 1-megapixel, progressive
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a70cd91e7461f693fa49a6a559afc9a
https://doi.org/10.1002/ima.1850050412
https://doi.org/10.1002/ima.1850050412
Autor:
B. Berkey, Constantine N. Anagnostopoulos, Teh-Hsuang Lee, David L. Losee, Timothy J. Tredwell, D. Nicols, Eric G. Stevens, R.P. Khosla, T. Kelly, Win Chang
Publikováno v:
1987 IEEE International Solid-State Circuits Conference. Digest of Technical Papers.
A 2/3" format 1.4 megapixel full-frame CCD image sensor with a cell size of 6.8×6.8μ m, that achieves a quantum efficiency of 50% at 550nm, will be disclosed. Output-amplifier noise is 15rms electrons. Amplifier uses buried channel LDD NMOSFETs. In
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::322f146702343dedb74daebec00fdbc5
https://doi.org/10.1109/isscc.1987.1157224
https://doi.org/10.1109/isscc.1987.1157224
Autor:
Teh-Hsuang Lee, Win-Chyi Chang, B.C. Burkey, Kwok Y. Wong, G. R. Moore, David L. Losee, R.P. Khosla
Publikováno v:
International Symposium on VLSI Technology, Systems and Applications.
The authors have developed an ultra-high-resolution, full-frame CCD imager of 2048*2048 pixels. The pixel size is 9 mu m*9 mu m. The sensor has dual readout registers to increase the data rate. It is designed for a horizontal clock rate of 20 MHz. Wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::334e66e03b87092e78ddc6f34534d11b
https://doi.org/10.1109/vtsa.1989.68578
https://doi.org/10.1109/vtsa.1989.68578
Autor:
Y. Yee, Eric G. Stevens, Timothy J. Tredwell, R.P. Khosla, David Newell Nichols, Teh-Hsuang Lee, David L. Losee, B.C. Burkey
Publikováno v:
International Technical Digest on Electron Devices Meeting.
A 1024*1024 IL CCD (charge coupled device) image sensor has been developed that incorporates antiblooming and electronic exposure control while eliminating lag and obtaining a high responsivity. The incorporation of the antiblooming structure and ele
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4fac3664a6be0754b801d0b83399571
https://doi.org/10.1109/iedm.1989.74253
https://doi.org/10.1109/iedm.1989.74253
Autor:
Stephen L. Kosman, Teh-Hsuang Lee, B.C. Burkey, Wesley A. Miller, Madhav Mehra, Win-Chyi Chang, Gilbert Alan Hawkins, R.P. Khosla, Paul L. Roselle, J.C. Cassidy, Eric G. Stevens
Publikováno v:
International Technical Digest on Electron Devices.
A large-area, 1.3 million pixel, full-frame CCD (charge coupled device) image sensor has been developed that incorporates both a lateral-overflow drain (LOD) for antiblooming control and a transparent indium-tin oxide (ITO) gate electrode for increas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13752946c742acd41549e2ec904c3757
https://doi.org/10.1109/iedm.1990.237173
https://doi.org/10.1109/iedm.1990.237173
Autor:
Teh-Hsuang Lee, Tredwell, T.J., Burkey, B.C., Kelly, T.M., Khosla, R.P., Losee, D.L., Nielsen, R.L., McColgin, W.C.
Publikováno v:
IEEE Transactions on Electron Devices; 1985, Vol. 32 Issue 8, p1439-1445, 7p
Autor:
B.C. Burkey, T.M. Kelly, Timothy J. Tredwell, David L. Losee, Teh-Hsuang Lee, W.C. McColgin, R.L. Nielsen, R.P. Khosla
Publikováno v:
IEEE Transactions on Electron Devices. 32:1439-1445
A 360 000-pixel color-image sensor for imaging photographic negatives is described. The charge-coupled image sensor consists of a 740 (H) × 242 (V) × 2 image area and dual horizontal output registers. The design, spectral response, charge capacity,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a7a52336df7ce7a96e9d39e3da3ebb9a
https://doi.org/10.1109/t-ed.1985.22142
https://doi.org/10.1109/t-ed.1985.22142
Autor:
B.C. Burkey, Teh-Hsuang Lee, James P. Lavine, Win-Chyi Chang, Timothy J. Tredwell, J. Littlehale, E.A. Trabka
Publikováno v:
1984 International Electron Devices Meeting.
A pinned photodiode has been developed for use in an interline-transfer CCD. This photoelement has excellent blue response and high charge capacity. Both modeling and experimental results will be presented, including process considerations necessary
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::559e0f27af6fb37cb4495b89265fea1c
https://doi.org/10.1109/iedm.1984.190633
https://doi.org/10.1109/iedm.1984.190633
Autor:
B.C. Burkey, T.M. Kelly, David L. Losee, R.P. Khosla, Timothy J. Tredwell, Teh-Hsuang Lee, J.S. Hayward
Publikováno v:
SPIE Proceedings.
We describe a very high-speed image sensor for image recording at up to 2,000 full or 12,000 partial frames per second. The sensor consists of a 192 V x 248 H array of photo-capacitors. For high-speed operation, the image-sensing area is divided into
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d4afc6ffd87133943724773e820a5a28
https://doi.org/10.1117/12.967852
https://doi.org/10.1117/12.967852
Publikováno v:
Extended Abstracts of the 1984 International Conference on Solid State Devices and Materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d47daba3de6420992b0f01d7e919761c
https://doi.org/10.7567/ssdm.1984.b-7-2
https://doi.org/10.7567/ssdm.1984.b-7-2